Electron radiation damage and the green edge emission of CdS

Bryant, F. J.; Radford, C J

doi:10.1088/0022-3719/3/6/008

Cited by 8 publications

(2 citation statements)

References 14 publications

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“…This effect in CdS has been investigated previously [23]. It was shown that the electron beam irradiation produced little change in the green edge emission spectra ranging from 2.29 eV to 2.52 eV.…”

Section: In the Esm)mentioning

confidence: 72%

Linear strain-gradient effect on the energy bandgap in bent CdS nanowires

Zhang

Kou

et al. 2010

Nano Res.

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Although possible non-homogeneous strain effects in semiconductors have been investigated for over a half century and the strain-gradient can be over 1% per micrometer in flexible nanostructures, we still lack an understanding of their influence on energy bands. Here we conduct a systematic cathodoluminescence spectroscopy study of the strain-gradient induced exciton energy shift in elastically curved CdS nanowires at low temperature, and find that the red-shift of the exciton energy in the curved nanowires is proportional to the strain-gradient, an index of lattice distortion. Density functional calculations show the same trend of band gap reduction in curved nanostructures and reveal the underlying mechanism. The significant linear straingradient effect on the band gap of semiconductors should shed new light on ways to tune optical-electronic properties in nanoelectronics.

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Section: In the Esm)mentioning

confidence: 72%

Linear strain-gradient effect on the energy bandgap in bent CdS nanowires

Zhang

Kou

et al. 2010

Nano Res.

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“…It was demonstrated that, depending on the crystal type, the maximums of edge emission lines shift to the long wave spectrum regions for 0.005 -0.014 eV. 4. The temperature dependence of the edge emission was investigated.…”

Section: Discussionmentioning

confidence: 99%

Spectral-kinetic characteristics Of donor-acceptor pairs in ZnSe and CdS crystals

Олешко

Vil’chinskaya

2012

2012 7th International Forum on Strategic Technology (IFOST)

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This research was focused on the edge emission of undoped CdS and ZnSe monocrystals. The results of the research showed that the pulse cathodoluminescence spectra at a temperature of 15 K consist of the short-wave and long-wave series of edge emission bands with the equidistant structure. We also investigated the temperature dependence of the edge emission in the interval of 15-80 К and the afterglow spectra within the range from 10 -8 to 10 -2 s.

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Bound-to-bound emission at 510 nm in cadmium sulphide

Bryant

Radford

1972

Phys. Stat. Sol. (a)

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An emission band observed at 510.0 nm in cadmium sulphide at liquid helium temperature has been studied and on the basis of its temperature dependent properties it has been shown to result from a bound‐to‐bound radiative recombination process. At a transition temperature of approximately 30 K the 510.0 nm emission is replaced by a new free‐to‐bound emission band occurring at 507.5 nm. The 510 nm emission band results from recombination between an acceptor of depth 0.140 eV and a donor of depth ≈︁0.03 eV and is accompanied by an emission at 487.8 nm which is due to an exciton bound to the same neutral acceptor. The peak position of the 510 nm band corresponds to a donor‐acceptor separation of 7.5 nm and the donors and acceptors are believed to be preferentially paired.

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Electron radiation damage and the green edge emission of CdS

Cited by 8 publications

References 14 publications

Linear strain-gradient effect on the energy bandgap in bent CdS nanowires

Linear strain-gradient effect on the energy bandgap in bent CdS nanowires

Spectral-kinetic characteristics Of donor-acceptor pairs in ZnSe and CdS crystals

Bound-to-bound emission at 510 nm in cadmium sulphide

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