Electron response in windowless Si(Li), SDD and PIN diode photodetectors

Cox, Christopher E.; Asztalos, S. J.; Hennig, Wolfgang; Warburton, W. K.

doi:10.1109/nssmic.2011.6154422

Cited by 6 publications

(4 citation statements)

References 8 publications

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“…With respect to energy dependency, there is higher dependency in the 33 keV up to 100 keV range. However, this could be attenuated with the application of coatings [14,4]. The electric current level generated by the BPW34 photodiode is adequate to construct an op-amp based electrometer design, as part of a occupational radiation exposure monitoring system.…”

Section: Discussionmentioning

confidence: 99%

“…In case of low energy photons, the electrical current is produced by the photoelectric effect as a result of the interaction of the radiation in the intrinsic layer, and by the Compton effect for X-rays of high energy [1,2]. Photodiodes have been evaluated for detection of ionizing radiation for therapy and diagnostic radiology, including X-ray tomography [3][4][5][6][7][8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

“…Other coatings, including multilayer coatings can be used to create bandpass filters for incoming radiation [14]. Coating can affect the resolution, thus windowless diodes are useful for high resolution measurements [4]. Photodiodes are low cost, small volume and lightweight detectors.…”

Section: Introductionmentioning

confidence: 99%

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PiN photodiode performance comparison for dosimetry in radiology applications

2016

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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PiN photodiode performance comparison for dosimetry in radiology applications

2016

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“…The response function of silicon detectors to electrons has been studied previously, for example [18,12]. The response is defined by an absorption peak and an escape component; where in the energy range measured in this work the escape component would be due to electron backscattering, energy straggling in the source construction and energy loss in the silicon dead layer [19,20].…”

Section: Conversion Electron Spectroscopymentioning

confidence: 97%

Alpha and conversion electron spectroscopy of 238,239Pu and 241Am and alpha-conversion electron coincidence measurements

Dion

Miller

Warren

2016

Nuclear Instruments and Methods in Physics Research Section A:

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A technique to determine the isotopic constituents of a mixed actinide sample has been proposed by a coincident alpha-conversion electron measurement. This presents a unique signature to allow the unfolding of isotopes that possess overlapping alpha particle energy and reduce backgrounds of an unseparated sample. The work presented here are results of conversion electron spectroscopy of 241 Am, 238 Pu and 239 Pu using a dual-stage peltier-cooled 25 mm 2 silicon drift detector and alpha spectroscopy with a passivated ion implanted planar silicon detector. The conversion electron spectra were evaluated from 20-55 keV based on fits to the dominant conversion electron emissions, which allowed the relative conversion electron emission intensities to be determined. These measurements provide crucial singles spectral information and calibration to aid in the coincident measurement approach. Furthermore, an alpha-conversion electron spectrometer was assembled using the silicon based detectors described and results of a coincident spectrum analysis is reported for 241 Am.

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