Electron scattering at single crystal Cu surfaces

Purswani, J. M.; Gall, Daniel

doi:10.1016/j.tsf.2007.07.146

Cited by 60 publications

(42 citation statements)

References 33 publications

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“…This summary also does not lead to any definite conclusion on the power in the dependence of resistivity on 1 / L. Recent experimental results of Ref. 28 yield the dependence 1 / L 1.2 which is consistent with our results though the number of experimental points is relatively small to make a definite conclusion. As it was mentioned before, a higher power of 1 / L in experimen-tal data on the dependence of resistivity on film thickness for ultrathin films should be considered as a sign of QSE in transport at least in the form of the quantum cutoff.…”

Section: Discussionsupporting

confidence: 87%

Interference between bulk and boundary scattering in high quality films

Chatterjee

Meyerovich

2010

Phys. Rev. B

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Quasiclassical interference between bulk and boundary scattering channels in thin metal films with rough surfaces is discussed. The effective transport time, which is calculated beyond Mathiessen's approximation, exhibits a nonanalytical dependence on the bulk relaxation time. Interference effects strongly affect the temperature ͑phonon scattering in the bulk͒ or concentration ͑impurity-scattering͒ dependencies of the conductivity. The results for large bulk free paths L b and large correlation radii ͑lateral sizes͒ R of surface inhomogeneities are described by simple analytical equations. At R 2 ϳ aL b we predict a crossover between two asymptotic regimes for interference contributions that are characterized by distinct temperature/concentration dependencies. Experimental implications of our results are discussed.

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Section: Discussionsupporting

confidence: 87%

Interference between bulk and boundary scattering in high quality films

Chatterjee

Meyerovich

2010

Phys. Rev. B

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“…The effects of electron scattering in a confined geometry have been studied extensively in thin copper films [5][6][7][8][9][10] and nanoscale copper wires [2,[11][12][13][14][15]. When the sample size is reduced to the nanoscale level, the increase of electrical resistivity has been mostly explained by the increase in surface and grain boundary scattering [14,16].…”

Section: Introductionmentioning

confidence: 99%

Experimental study of electron-phonon coupling and electron internal thermalization in epitaxially grown ultrathin copper films

Shen

Timalsina

et al. 2015

Phys. Rev. B

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Electron interaction in nanoscale metal structures is of major interest in understanding and designing nanoscale electronic devices. In this study, electron interaction in epitaxially grown 20-nm-thick copper film on Si(100) was studied using femtosecond pump-probe technique with tunable probe photon energy near the d-band to Fermi-level transition. It was found that probe-photon-energy dependence on the transient reflectivity signal can be divided into four regimes, and the borders of these regimes depend on the pump power. Based on a phenomenological model, the excited electrons were separated into nonthermalized and thermalized electrons, and it was seen that the probe-photon-energy dependence of the signal can be explained by the difference of the ratios of nonthermalized to thermalized electron components. Furthermore, it was found that each of these two components can be selectively excited by properly choosing the probe photon energy. Each electron-phonon (el-ph) coupling and electron internal thermalization time were investigated individually without interference from each other's processes. We show that el-ph coupling factor is larger in epitaxial copper film than the previously reported value in polycrystalline-copper film. In addition, the electron internal thermalization time is smaller than the reported value for the polycrystalline gold and silver films.

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“…In contrast, diffuse scattering (p = 0) results in a complete randomization of the electron momentum and a corresponding increase in the resistivity. Surface scattering processes and, in turn, values for p, are affected by charge density variations associated with atomic level surface roughness [8][9][10][11] and the interface with other atoms and molecules, [12][13][14][15][16] which are typically different for the top and bottom surfaces. We reported earlier, 10 using a derivation comparable to FS, the expression for the resistivity ρ s of a single-crystal metal layer of thickness d with top and bottom surfaces with different specularity parameters p 1 and p 2 : and R (0 < R < 1) is the reflection coefficient of electrons scattering at the grain boundaries perpendicular to the current flow.…”

Section: Introductionmentioning

confidence: 99%

Electron scattering at surfaces and grain boundaries in Cu thin films and wires

et al. 2011

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The electron scattering at surfaces, interfaces, and grain boundaries is investigated using polycrystalline and single-crystal Cu thin films and nanowires. The experimental data is described by a Fuchs-Sondheimer (FS) and Mayadas-Shatzkes (MS) model that is extended to account for the large variation in the specific resistivity of different grain boundaries as well as in situ anneal and a subsequent etch to match the thickness of the SG samples. Nanowires are fabricated from the SG and LG thin films using a subtractive patterning process, yielding wire widths of 75-350 nm. Single-crystal and LG layers exhibit a 18-22% and 10-15% lower resistivity than SG layers, respectively. The resistivity decrease from SG to LG Cu nanowires is 7-9%. The thickness and grain size dependence of the resistivity of polycrystalline and singlecrystal Cu layers is well described by an exact version of the existing FS+MS model, but is distinct from the commonly used approximation which introduces an error that increases with decreasing layer thickness from 6.5% for d = 50 nm to 17% for d = 20 nm. The case of nanowires requires the FS+MS model to be extended to account for variation in the grain boundary reflection coefficient R, which effectively increases the overall resistivity by, for example, 16% for 50×45 nm 2 wires. The overall data from single and polycrystalline Cu layers and wires yields R = 0.25±0.05, and p = 0 at Cu-air and Cu-Ta interfaces.2

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Electron scattering at single crystal Cu surfaces

Cited by 60 publications

References 33 publications

Interference between bulk and boundary scattering in high quality films

Interference between bulk and boundary scattering in high quality films

Experimental study of electron-phonon coupling and electron internal thermalization in epitaxially grown ultrathin copper films

Electron scattering at surfaces and grain boundaries in Cu thin films and wires

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