Electron spectroscopy and diffraction studies of metal contact reactions in amorphous chalcogenides

Fitzgerald, A. G.; McHardy, C.P.

doi:10.1016/0039-6028(85)90950-1

Cited by 8 publications

(2 citation statements)

References 10 publications

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“…Moreover, switching characteristics of such devices were similar to the characteristics of the devices prepared without a native oxide layer. The diffusion of Ag and Cu was also reported in literature for a variety of different chalcogenides [29][30][31][32].…”

Section: Ecm Cells With Gradual Linear Switchingsupporting

confidence: 56%

“…In contrast, for oxide-based ECM cells, resistive switching with Sn [26], Co [27], Ni, V, Fe and even Au [28] as active electrodes has been observed and can lead to altered stabilities, resistances and SET/RESET characteristics. However, chalcogenide materials provide a different chemical environment compared to oxides and a possible dissolution of the active electrode has to be taken into account [29][30][31][32]. Therefore, the formed metal/solid electrolyte interfaces differ from oxides, which should affect device performances and reliability.…”

Section: Introductionmentioning

confidence: 99%

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Impact of interfaces on bipolar resistive switching behavior in amorphous Ge–Sb–Te thin films

Bryja¹,

Grüner²,

Gerlach³

et al. 2020

J. Phys. D: Appl. Phys.

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Electrochemical metallization memories have received much attention as candidates for next generation non-volatile memory applications, due to their fast switching speed, simple structure, high scalability and low energy consumption. Chalcogenide compounds like Ge–Sb–Te-based materials are extensively studied solid electrolytes for such devices and considered within the most promising candidates. In this work, the influence of different electrode materials on bipolar resistive switching characteristics of amorphous Ge–Sb–Te thin films with close composition to 2:2:5, prepared by pulsed laser deposition, is studied. Detailed investigations by current-voltage measurements, secondary ion mass spectrometry and cross-sectional transmission electron microscopy in conjunction with energy-dispersive x-ray spectroscopy are presented. Depending on the utilized electrode material, analog switching (Cu, Ag, Ti), digital switching (Co, Cr, Ta, Al) or no switching (Pt, Au and Cr-CrOx) occurs. This work shows that the switching behavior of Ge–Sb–Te strongly depends on the solubility and reactivity of the electrode material.

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Section: Ecm Cells With Gradual Linear Switchingsupporting

confidence: 56%

Section: Introductionmentioning

confidence: 99%

Impact of interfaces on bipolar resistive switching behavior in amorphous Ge–Sb–Te thin films

Bryja¹,

Grüner²,

Gerlach³

et al. 2020

J. Phys. D: Appl. Phys.

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The origin of electron beam patterning in silver/amorphous chalcogenide bilayers

Fitzgerald

2015

J Mater Sci

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The influence of twinning on the strain hardening rate and fracture mechanism in AZ31B magnesium alloy was studied in this work by in situ microstructural analysis during tensile testing in a chamber of scanning electron microscope. Three types of samples used in this study were obtained by (1) extrusion (as-supplied), (2) I-ECAP and (3) I-ECAP followed by side upsetting. Microstructures, textures and mechanical properties were examined after each processing step. An analytical equation was used to describe flow stress curves of the samples which exhibited various modes of deformation (1) only by slip, (2) dominated by tensile twinning followed by slip and (3) dominated by contraction twinning followed by slip. It was shown that tensile twinning increases strain hardening rate, while the opposite is observed for contraction twinning. The effective Schmid factors for slip in volumes deformed by tensile and contraction twinning were determined in this work using modelling approach as 0.215 and 0.45, respectively. Contraction twinning was also revealed to be responsible for an earlier fracture of the extruded sample subjected to tension, since microcracking was shown explicitly to be initiated within twins.

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Photoinduced phenomena in amorphous chalcogenides

Kolobov

Tanaka²

2001

Handbook of Advanced Electronic and Photonic Materials and Devices

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Electron spectroscopy and diffraction studies of metal contact reactions in amorphous chalcogenides

Cited by 8 publications

References 10 publications

Impact of interfaces on bipolar resistive switching behavior in amorphous Ge–Sb–Te thin films

Impact of interfaces on bipolar resistive switching behavior in amorphous Ge–Sb–Te thin films

The origin of electron beam patterning in silver/amorphous chalcogenide bilayers

Photoinduced phenomena in amorphous chalcogenides

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