Electron spectroscopy studies on SiC films before and after hydrogen ion irradiation

Huang, N. K.; Bing, Yang; Wang, Dezhi

doi:10.1007/bf02838474

Cited by 2 publications

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Effect of heating on hydrogen retention in C-SiC coatings

Ren

Zhang

et al. 2008

J. Wuhan Univ. Technol.-Mat. Sci. Edit.

View full text Add to dashboard Cite

C-SiC coatings were prepared on stainless steel with magnetron sputtering deposition followed by Argon ion bombardment. These samples were implanted by 5 keV hydrogen ion beam. SEM, SIMS and IR transmission were utilized to study the mechanism and the stability of hydrogen retention of C-SiC coatings. Comparison was made between the samples with and without removing Argon by heating then followed by H ＋ ion implantation. The results show that removal of argon by heating can improve the hydrogen retention of the C-SiC coatings. The thermal stability of hydrogen barrier for the C-SiC coatings was investigated, it is found that the property of hydrogen retention for the C-SiC coatings is still good after heating at 573 K, but it becomes worse after heating at 873 K, and it loses after heating at 1 173 K.

show abstract

Effect of heating on hydrogen retention in C-SiC coatings

Ren

Zhang

et al. 2008

J. Wuhan Univ. Technol.-Mat. Sci. Edit.

View full text Add to dashboard Cite

show abstract

Fullerene based materials for ultra-low-k application

Broczkowska

Klocek

Friedrich

et al. 2010

2010 International Students and Young Scientists Workshop "Photonics and Microsystems"

View full text Add to dashboard Cite

Fullerene-based materials are considered to be a candidate for ultra-low-k material applications. We have incorporated fullerene C60 into a siloxane material by means of the sol-gel method. Thickness of obtained film was investigated by atomic force microscope, dielectric constant was measured by the capacitance-voltage characterization (CV). Interactions between the components within the films were investigated by using X-ray photoelectron spectroscopy and near edge X-ray absorption fine structure spectroscopy. We found that the ratio of carbon, oxygen and silicon atoms within obtained film equals 2.7:1.9:1. The microscopic and CV investigations show that the sample's composition is inhomogenous although the fullerene's concentration within the material is low. However, dielectric constant is in the range of 2.3 to 2.5

show abstract

Electron spectroscopy studies on SiC films before and after hydrogen ion irradiation

Cited by 2 publications

References 8 publications

Effect of heating on hydrogen retention in C-SiC coatings

Effect of heating on hydrogen retention in C-SiC coatings

Fullerene based materials for ultra-low-k application

Contact Info

Product

Resources

About