2011
DOI: 10.1209/0295-5075/96/67010
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Electron spin relaxation as tracer of excitons in a two-dimensional electron-hole plasma inside a (110)-GaAs quantum well

Abstract: We exploit the influence of the Coulomb interaction between electrons and holes on the electron spin relaxation in a (110)-GaAs quantum well to unveil excitonic signatures within the many particle electron-hole system. The temperature dependent time-and polarization-resolved photoluminescence measurements span five decades of carrier density, comprise the transition from localized excitons over quasi free excitons to an electron-hole plasma, and reveal strong excitonic signatures even at relatively high densit… Show more

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Cited by 4 publications
(3 citation statements)
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“…However, any continuous or modulated injection of carriers due to absorption can alter the spin dynamic significantly. Especially in semiconductors optical pumping induces spin dephasing mechanisms, which often overshadow the inherent spin dynamic . A widely employed alternative to investigate the spin dynamic without the obstacles of optical pumping is optical Faraday rotation with probe photon energies in the transparent regime.…”
Section: Basics Of Spin Noisementioning
confidence: 99%
See 1 more Smart Citation
“…However, any continuous or modulated injection of carriers due to absorption can alter the spin dynamic significantly. Especially in semiconductors optical pumping induces spin dephasing mechanisms, which often overshadow the inherent spin dynamic . A widely employed alternative to investigate the spin dynamic without the obstacles of optical pumping is optical Faraday rotation with probe photon energies in the transparent regime.…”
Section: Basics Of Spin Noisementioning
confidence: 99%
“…Henceforth, (110)‐GaAs quantum wells attracted great attention in the realm of semiconductor spintronics since here the electron spin relaxation times are extremely long even at room temperature and mostly limited by intersubband electron scattering induced spin relaxation (ISR) . However, at low temperatures the impact of ISR is weak and without the DP mechanism spin relaxation only takes place via the Bir–Aronov–Pikus mechanism resulting from electron–hole exchange interaction of free carriers or excitonic electron–hole spin interaction , which relevance increases with excitation densities . SNS avoids optical excitation and is therefore perfectly suited to determine the experimentally unaltered contingently long intrinsic spin‐relaxation time τ z .…”
Section: Spin Noise In Semiconductorsmentioning
confidence: 99%
“…11 A recent coherent control study on (110)-oriented GaAs QWs revealed novel photocurrents that directly depend on exciton polarization dephasing. 12 The contribution of excitons to spin currents 13 and the electron spin relaxation time 14 were also inferred. However, a clear understanding of excitonic effects in these QWs is lacking.…”
mentioning
confidence: 99%