Electron spin resonance and instabilities in metal insulator semiconductor systems

Lenahan, Patrick M.

doi:10.1016/0167-9317(93)90145-u

Cited by 15 publications

(2 citation statements)

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“…Indeed, these kinds of defects are known to be especially dominant in the as-prepared hydrogenated and partially oxidized meso-PS. [36][37][38] As a result, the holes concentrations are very low in the as-prepared meso-PS samples because the holes are efficiently trapped by the surface states. The HF treatment efficiently removes the surface defects playing the role of electronic traps for the free charge carriers.…”

Section: Resultsmentioning

confidence: 99%

Determining the impact of hydrofluoric acid on surface states of as-prepared and chemically modified Si nanocrystals

2016

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Section: Resultsmentioning

confidence: 99%

Determining the impact of hydrofluoric acid on surface states of as-prepared and chemically modified Si nanocrystals

2016

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“…The oxide bulk defects (E ) and interface defects (P b centers) play an important role in the reliability properties of high-k dielectrics and their presence limits the use of high-k dielectrics [24][25][26][27][28]. Electron paramagnetic resonance (EPR) is a very specialized and sensitive technique for detecting and characterizing paramagnetic centers for studying the structure of point defects present in high-k gate dielectric stacks.…”

Section: Epr and Internal Photoemission Study On Charge Trapping Kine...mentioning

confidence: 99%

Charge trapping and reliability characteristics of sputtered Y₂O₃high-kdielectrics on N- and S-passivated germanium

Mahata

Bera

Das

et al. 2009

Semicond. Sci. Technol.

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We demonstrate the potential of sulfur passivation to improve the interface characteristics between germanium (Ge) and Y 2 O 3 high-k gate dielectric. Effects of nitrogen (N) and sulfur (S) passivation of the Ge surface on the charge trapping and reliability properties of Y 2 O 3 /Ge gate stacks are studied in detail and the results are compared. Sulfur passivation of the Ge surface has been performed using both the wet sulfidation technique with aqueous ammonium sulfide and plasma sulfidation with H 2 S gas. N-passivation of Ge substrates has been performed in NO plasma for comparison. Ultrathin (∼15 nm) Y 2 O 3 films are deposited on both the N-and S-passivated p-Ge (1 0 0) wafers. Y 2 O 3 films on the S-passivated Ge surface show low fixed oxide charge and interface state density than what is achieved with N-passivation. The electrical characterization results of MOS capacitors with Y 2 O 3 films reveal the potential of S-passivation for the fabrication of Y 2 O 3 /Ge gate stacks for Ge MOSFETs.

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Methods of Forming SOI Wafers

Cristoloveanu

1995

Electrical Characterization of Silicon-on-Insulator Materials and Devices

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Electron spin resonance and instabilities in metal insulator semiconductor systems

Cited by 15 publications

References 58 publications

Determining the impact of hydrofluoric acid on surface states of as-prepared and chemically modified Si nanocrystals

Determining the impact of hydrofluoric acid on surface states of as-prepared and chemically modified Si nanocrystals

Charge trapping and reliability characteristics of sputtered Y₂O₃high-kdielectrics on N- and S-passivated germanium

Methods of Forming SOI Wafers

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Electron spin resonance and instabilities in metal insulator semiconductor systems

Cited by 15 publications

References 58 publications

Determining the impact of hydrofluoric acid on surface states of as-prepared and chemically modified Si nanocrystals

Determining the impact of hydrofluoric acid on surface states of as-prepared and chemically modified Si nanocrystals

Charge trapping and reliability characteristics of sputtered Y2O3high-kdielectrics on N- and S-passivated germanium

Methods of Forming SOI Wafers

Contact Info

Product

Resources

About

Charge trapping and reliability characteristics of sputtered Y₂O₃high-kdielectrics on N- and S-passivated germanium