Electron-Spin-Resonance Studies of Heavily Phosphorus-Doped Silicon

Ue, Hiromoto; Maekawa, Shigeru

doi:10.1103/physrevb.3.4232

Cited by 130 publications

(49 citation statements)

References 22 publications

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“…For the sample with the highest doping concentration v is constant for T < 40 K and decreases only little above this temperature. A quite similar behavior was found for the CE resonance in monocrystalline Si (c-Si) [8]. According to Refs.…”

Section: Resultssupporting

confidence: 71%

“…According to Refs. [7,8] the temperature dependence of the susceptibility can be described by a superposition of two contributions: (1) A part which follows the Curie law due to paramagnetism of localized, non-interacting spins and (2) a contribution due to the Pauli paramagnetism of the free electron gas. The Curie susceptibility v Curie depends on 1/T and is given by…”

Section: Resultsmentioning

confidence: 99%

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An electron-spin-resonance study of laser crystallized polycrystalline silicon

Brendel

Nickel

Lips

et al. 2004

Journal of Non-Crystalline Solids

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Section: Resultssupporting

confidence: 71%

Section: Resultsmentioning

confidence: 99%

An electron-spin-resonance study of laser crystallized polycrystalline silicon

Brendel

Nickel

Lips

et al. 2004

Journal of Non-Crystalline Solids

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“…The effects of Fe and Mn impurities on Si:P spin relaxation have been studied by CESR (Kennedy and Pifer, 1975), extracting the spin-flip scattering cross section of silicon conduction electrons on iron impurities. An early CESR study of heavily doped Si:P, below 100 K, (Ue and Maekawa, 1971) found a linear increase of the spin relaxation rate with increasing temperature. Such an increase could be normally attributed to phonons (although with a different power, see Eq.…”

Section: E2 Spin Relaxation In Siliconmentioning

confidence: 99%

Semiconductor spintronics

Fabian¹,

Matos-Abiague²,

Ertler³

et al. 2007

Acta Physica Slovaca. Reviews and Tutorials

921

1,204

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Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. While metal spintronics has already found its niche in the computer industry-giant magnetoresistance systems are used as hard disk read heads-semiconductor spintronics is yet to demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor materials, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field. 72.25.Rb, 75.50.Pp, PACS

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“…͑2͔͒. 26,61 In these works the concentrations of the two different types of electrons are obtained as results of numerical fits to the underlying model and are independent of temperature.…”

Section: Magnetic Susceptibilitymentioning

confidence: 99%

Electron spin resonance investigation of electronic states in hydrogenated microcrystalline silicon

et al. 1999

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Phosphorus-doped microcrystalline silicon with high-crystalline volume fraction was prepared by very highfrequency plasma enhanced chemical vapor deposition. The material is studied by electron spin resonance and transport measurements as a function of doping and temperature. In all samples a resonance at gϭ1.998 is found with spin densities very similar to the phosphorus dopant density and also the carrier density at high doping levels. This resonance is related to doping-induced excess electrons. Its spin density is largely temperature independent, and the corresponding electrons occupy dopant or conduction band tail states at low temperatures, while they are excited into the conduction band at high T. This gradual transition is accompanied by changes in linewidth, g value and spin-lattice relaxation time. Hyperfine interaction with P nuclei is only observed for intermediate doping levels and has very small intensity. From the value of the hyperfine splitting, the effective Bohr radius of the impurity wave function is estimated to 12 Å. Transport at low temperatures (TϽ20 K) proceeds via hopping between donor states and/or conduction-band tail states. A thermal activation energy of 3.5 meV and similar localization lengths as from the hyperfine data are found for this process. At temperatures above 20 K electronic transport is governed by a wide distribution of activation energies.

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Electron-Spin-Resonance Studies of Heavily Phosphorus-Doped Silicon

Cited by 130 publications

References 22 publications

An electron-spin-resonance study of laser crystallized polycrystalline silicon

An electron-spin-resonance study of laser crystallized polycrystalline silicon

Semiconductor spintronics

Electron spin resonance investigation of electronic states in hydrogenated microcrystalline silicon

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