Electron spin resonance study of mixed Bi<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si55.svg" display="inline" id="d1e536"><mml:msub><mml:mrow/><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math>Se<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si56.svg" display="inline" id="d1e544"><mml:msub><mml:mrow/><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:math> topological insulator–magnetic insulator nanoparticles

Lee, Kyu Won; Lee, Yeo Jin; Lee, Cheol Eui

doi:10.1016/j.jpcs.2023.111554

Journal of Physics and Chemistry of Solids

2023

DOI: 10.1016/j.jpcs.2023.111554

|View full text |Cite

Electron spin resonance study of mixed Bi2Se3 topological insulator–magnetic insulator nanoparticles

Kyu Won Lee

Yeo Jin Lee

Cheol Eui Lee

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2023

2024

Publication Types

Select...

Article2

Relationship

Self Cite1

Independent1

Authors

Journals

Cited by 2 publications

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Enhanced UV Photoresponse Performances of TiO₂/Bi₂Se₃ Heterostructure‐Based Photoelectrochemical Photodetector

Yang,

Ye,

et al. 2024

Physica Status Solidi (a)

View full text Add to dashboard Cite

Bi2Se3 has a unique surface state and excellent electron transport performance, but because of its narrow band gap, Bi2Se3‐based photodetectors are difficult to achieve high response to ultraviolet (UV) light. In this paper, the TiO2/Bi2Se3 heterostructure was constructed by spin‐coating TiO2 on Bi2Se3 film, and TiO2/Bi2Se3 heterostructure‐based photoelectrochemical (PEC) photodetector was constructed, and a series of measurements were carried out. The measure results showed that the photoresponse performance of TiO2/Bi2Se3 heterostructure‐based photodetector was improved in the visible region, and the performance in the UV was further improved. This is because the type ii band alignment between TiO2 and Bi2Se3 is beneficial for the effective separation and transfer of photogenerated electron‐hole pairs, reducing recombination losses and enhancing the overall photoresponse. In addition, under the action of the built‐in electric field formed by the heterostructure, the photogenerated electrons and holes are easier to separate, which reduces the recombination probability of the photogenerated electron‐hole pair and improves the photoelectric conversion efficiency. In the UV, TiO2/Bi2Se3 heterostructure can make more efficient use of the light absorption characteristics of TiO2 and absorb more photons, resulting in a larger photocurrent. These results indicate that TiO2/Bi2Se3 heterostructure‐based photodetector has great application potential in the UV.

show abstract

Enhanced UV Photoresponse Performances of TiO₂/Bi₂Se₃ Heterostructure‐Based Photoelectrochemical Photodetector

Yang,

Ye,

et al. 2024

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

Gapless edge states localized to odd/even layers of AA′-stacked honeycomb multilayers with staggered AB-sublattice potentials

Lee,

Lee

2023

Sci Rep

Self Cite

View full text Add to dashboard Cite

In honeycomb multilayers with staggered AB-sublattice potentials, we predict gapless edge states localized to either of the odd and the even layers for the AA$$^{\prime }$$ ′ stacking order in which the sublattice-pseudospin polarizations of adjacent layers are antiparallel. Gaps in the projected layer-pseudospin spectrum suppress interlayer hopping between odd and even layers. The layer-valley Chern number corresponding to the edge states was obtained by decomposing the occupied state into two layer-pseudospin sectors by using a projected layer-pseudospin operator. For the AB$$^{\prime }$$ ′ stacking, the sublattice-pseudospin polarizations of adjacent layers are antiparallel, but the layer-pseudospin spectrum gap closes at the interface of the topologically different states, leading to gapped edge states. For the AA and AB stackings where the sublattice-pseudospin polarizations of the adjacent layers are parallel, the gapless edge states corresponding to quantum valley Hall states are evenly distributed across the layers.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Electron spin resonance study of mixed Bi2Se3 topological insulator–magnetic insulator nanoparticles

Cited by 2 publications

References 35 publications

Enhanced UV Photoresponse Performances of TiO₂/Bi₂Se₃ Heterostructure‐Based Photoelectrochemical Photodetector

Enhanced UV Photoresponse Performances of TiO₂/Bi₂Se₃ Heterostructure‐Based Photoelectrochemical Photodetector

Gapless edge states localized to odd/even layers of AA′-stacked honeycomb multilayers with staggered AB-sublattice potentials

Contact Info

Product

Resources

About

Electron spin resonance study of mixed Bi2Se3 topological insulator–magnetic insulator nanoparticles

Cited by 2 publications

References 35 publications

Enhanced UV Photoresponse Performances of TiO2/Bi2Se3 Heterostructure‐Based Photoelectrochemical Photodetector

Enhanced UV Photoresponse Performances of TiO2/Bi2Se3 Heterostructure‐Based Photoelectrochemical Photodetector

Gapless edge states localized to odd/even layers of AA′-stacked honeycomb multilayers with staggered AB-sublattice potentials

Contact Info

Product

Resources

About

Enhanced UV Photoresponse Performances of TiO₂/Bi₂Se₃ Heterostructure‐Based Photoelectrochemical Photodetector

Enhanced UV Photoresponse Performances of TiO₂/Bi₂Se₃ Heterostructure‐Based Photoelectrochemical Photodetector