Electron state symmetries and optical transitions in semiconductor superlattices: I. grown along the [001] direction

Kitaev, Yu. É.; Panfilov, A. G.; Tronc, P.; Ėvarestov, R. A.

doi:10.1088/0953-8984/9/1/027

Cited by 22 publications

(18 citation statements)

References 30 publications

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“…Finally, when the spin±orbit interaction is taken into consideration, the symmetry correspondence between the Bloch states which transform according to single-valued irreps (without spin±orbit coupling) and those which transform according to double-valued irreps (with spin±orbit coupling) can be obtained following Ref. [4] with the spinor function D 1a2 = G 7 . Thus, for example, at the G point of the BZ, the symmetry correspondence is…”

Section: Band-state Symmetrymentioning

confidence: 99%

See 1 more Smart Citation

Optical Selection Rules for Hexagonal GaN

Tronc¹,

Kitaev²,

Wang³

et al. 1999

phys. stat. sol. (b)

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Section: Band-state Symmetrymentioning

confidence: 99%

“…The procedure used to establish the optical selection rules is given elsewhere [4]. We present the k 0 parts of Kronecker products of irreps corresponding to the various combinations of initial and final states at the G symmetry point of the BZ ( Table 2).…”

Section: Selection Rules For Optical Transitions Between Band Statesmentioning

confidence: 99%

Optical Selection Rules for Hexagonal GaN

Tronc¹,

Kitaev²,

Wang³

et al. 1999

phys. stat. sol. (b)

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“…These points are of particular interest since they are located at the surface of the SLBZ in directions parallel and perpendicular to the growth axis, respectively. 2 Hereafter, the point group irreducible representations ͑irreps͒ are labeled according to Ref. 3 and the labeling of space group irreps follows Ref.…”

Section: Introductionmentioning

confidence: 99%

Exact symmetries of electron Bloch states and optical selection rules in [001] GaAs/AlAs quantum wells and superlattices

Tronc

Kitaev

2001

Phys. Rev. B

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We determined the exact symmetries of conduction and valence Bloch states in type-I and type-II ͓001͔ (GaAs) m (AlAs) n superlattices at the ⌫ point and at some other symmetry points of the Brillouin zone of the superlattices and derived optical selection rules. Contrary to a result widely accepted in the envelope-function approximation ͑EFA͒, p z atomic orbitals cannot mix with p x and p y orbitals to build Bloch states. The phonon-assisted transitions involving the ⌫ point as an initial or final state are allowed both without and with taking into account the spin-orbit interaction whatever are the symmetries of the initial and final states. The electron band structure of the superlattices is discussed. Within the domain of validity of EFA ͑i.e., for not too small values of m and n͒, a detailed analysis of the Bloch-state symmetry and selection rules is provided on imposing invariance of the superlattice structure under the change of z to Ϫz ͑the z symmetry operation͒. It is shown that optical transitions between the conduction states arising from the ⌫ states of GaAs on one hand and the conduction states arising from the X states of AlAs on the other hand can be allowed from spin-orbit coupling only. The correspondence is provided between the symmetry of a Bloch state and the parity with respect to z of its associated envelope function. The effect of an electric field parallel to the growth axis is discussed. Quantum wells do not differ from superlattices with regard to Bloch-state and envelope-function symmetries or optical selection rules. All the above results are still valid for any pseudomorphic superlattice or quantum well made of two binary compounds with zinc-blend structure and identical cations or anions, such as, for example, in the GaN/AlN system.

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“…Современные технологические методы роста [1][2][3] позволяют изготовить искусственные монокристалли-ческие наноструктуры на основе известных полупро-водников. К их числу относятся короткопериодные сверхрешетки на основе кристаллов типа цинковой обманки (например, (GaAs) m (AlAs) n ) [4][5][6], вюрцита (GaN) m (AlN) n [7,8] и алмаза Si m Ge n [9,10]. Кремний является одним из наиболее широко используемых мате-риалов в качестве исходного кристалла.…”

Section: (поступила в редакцию 29 июня 2016 г)unclassified

Эволюция Симметрии Промежуточных Фаз И Их Фононных Спектров В Процессе Топохимического Превращения Кремния В Карбид Кремния

Китаев¹,

Кукушкин²,

Осипов³

2017

Физика Твердого Тела

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Выполнен симметрийный анализ кристаллической структуры и фононного спектра в процессе непрерывного превращения кремния в карбид кремния. Определена трансформация симметрии фононов в точках высокой симметрии зоны Бриллюэна при переходе от исходной кубической структуры кремния (алмаза) через промежуточную кубическую структуру SiC к тригональной структуре SiC. Установлены правила отбора для ИК и рамановских спектров во всех трех фазах. Авторы благодарят за финансовую поддержку РФФИ (гранты N 15-0306155 и 16-29-03149 -офи-м). DOI: 10.21883/FTT.2017.01.43946.267

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Electron state symmetries and optical transitions in semiconductor superlattices: I. grown along the [001] direction

Cited by 22 publications

References 30 publications

Optical Selection Rules for Hexagonal GaN

Optical Selection Rules for Hexagonal GaN

Exact symmetries of electron Bloch states and optical selection rules in [001] GaAs/AlAs quantum wells and superlattices

Эволюция Симметрии Промежуточных Фаз И Их Фононных Спектров В Процессе Топохимического Превращения Кремния В Карбид Кремния

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