Electron-stimulated mobility of adsorbed particles

Fedorus, A.G.; Klimenko, E.V.; Наумовец, А.Г.; Zasimovich, E.M.; Zasimovich, I.N.

doi:10.1016/0168-583x(95)80034-4

Cited by 25 publications

(6 citation statements)

References 45 publications

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“…Some articles have suggested enhacing the surface migration of atoms by using an electron beam to excite the surface. 13,14 If a similar mechanism applies to the photoexcited system presented here, the positive charging of the adatoms by the depletion of valence electrons may be responsible.…”

Section: Discussionmentioning

confidence: 93%

Morphological transition of Si1−xGex films growing on Si(100). II. Synchrotron-radiation-excited chemical-vapor deposition: From two-dimensional growth to growth in the Volmer–Weber mode

Akazawa

2002

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The morphological evolution of Si1−xGex films growing under conditions of excitation by high-energy photons (hν>100 eV) has been investigated by means of in situ spectroscopic ellipsometry. An atomically discontinuous wetting layer is produced by the incidence of the products of photolysis from Si2H6 and GeH4 on a hydrogen-terminated Si(100) surface. At temperatures of growth below 300 °C, a uniform Si1−xGex layer grows because of the strong hydrogen surfactant effect and the low mobility of the Si and Ge adatoms. At temperatures above 400 °C, most of the Si adatoms are in the form of monohydride and Ge adatoms are free of bonds with hydrogen atoms. On a partially hydrogen-covered surface, the number of dangling-bond terminated nucleation centers is restricted, while the migration of the adatoms is enhanced. This results in islanding with roughness up to a maximum height of about 100 Å from the initial stages of growth. Since the grain boundaries between islands become the sources of dislocations, the strain stored in the Si1−xGex islands is completely relieved. This leads to early coalescence so that a flat overlayer surface is recovered.

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Section: Discussionmentioning

confidence: 93%

Morphological transition of Si1−xGex films growing on Si(100). II. Synchrotron-radiation-excited chemical-vapor deposition: From two-dimensional growth to growth in the Volmer–Weber mode

Akazawa

2002

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…As already mentioned in the introduction, a number of studies of the adsorption and ion emission properties of SF 6 adsorbed on various surfaces have been reported [7][8][9][10][21][22][23][24][25][26]. However, a gap in the understanding of the results still exists.…”

Section: Structure and Bonding Of Sf 6 ; Thermal Effectsmentioning

confidence: 95%

Effects of electron irradiation on structure and bonding of SF6 on Ru(0001)

Faradzhev

Kusmierek

Yakshinskiy

et al. 2003

Low Temperature Physics

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Electron-stimulated desorption ion angular distribution (ESDIAD) and temperature-programmed desorption (TPD) techniques have been employed to study radiation-induced decomposition of fractional monolayer SF6 films physisorbed on Ru(0001) at 25 K. Our focus is on the origin of F+ and F− ions, which dominate ESD from fractional monolayers. F− ions escape only in off-normal directions and originate from undissociated molecules. The origins of F+ ions are more complicated. The F+ ions from electron-stimulated desorption of molecularly adsorbed SF6 desorb in off-normal directions, in symmetric ESDIAD patterns. Electron beam exposure leads to formation of SFx (x=0–5) fragments, which become the source of positive ions in normal and off-normal directions. Electron exposure >1016 cm−2 results in decomposition of the entire adsorbed SF6 layer.

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“…Another possible route for the network restructuring is electron-stimulated migration ͑ESM͒ of adatoms. 33,34 The mechanism underlying ESM involves highly mobile species produced by electron attachment to adatoms. Since numerous photoelectrons, Auger electrons, and secondary electrons are emitted with absorption of vuv photons, ESM is likely to contribute.…”

Section: Microscopic Processes For Vuv-induced Recrystallizationmentioning

confidence: 99%

Formation of a transient Si hydride multilayer and recrystallization of a Si-Si network during vacuum-ultraviolet-excited Si homoepitaxy fromSi2H6

Akazawa

1999

Phys. Rev. B

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The mechanism of vacuum-ultraviolet-excited Si epitaxy on Si͑100͒ from Si 2 H 6 has been clarified by spectroellipsometric measurement. The crystallinity evolution, classified into three types which depend strongly on the photon flux, is discriminated by distinct shapes of ͑⌿,⌬͒ trajectories. The formation of a Si hydride multilayer at the outermost surface was evidenced by the immediate changes in the ͑⌿,⌬͒ angles when Si 2 H 6 is introduced. This layer is decomposed quickly when the Si 2 H 6 supply is terminated. The Si hydride layer is then converted into a crystalline Si-Si network involving voids due to the photon-stimulated desorption of H atoms. For the epitaxy is to be maintained, the vacuum-ultraviolet-stimulated rearrangement of the Si-Si network into a dense Si crystal must further occur at a higher rate than deposition of Si hydrides.

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Electron-stimulated mobility of adsorbed particles

Cited by 25 publications

References 45 publications

Morphological transition of Si1−xGex films growing on Si(100). II. Synchrotron-radiation-excited chemical-vapor deposition: From two-dimensional growth to growth in the Volmer–Weber mode

Morphological transition of Si1−xGex films growing on Si(100). II. Synchrotron-radiation-excited chemical-vapor deposition: From two-dimensional growth to growth in the Volmer–Weber mode

Effects of electron irradiation on structure and bonding of SF6 on Ru(0001)

Formation of a transient Si hydride multilayer and recrystallization of a Si-Si network during vacuum-ultraviolet-excited Si homoepitaxy fromSi2H6

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