2000
DOI: 10.1134/1.1307479
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Electron subsystem superheating as a cause of nonlinear current-voltage characteristics of amorphous InOx films

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Cited by 8 publications
(8 citation statements)
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“…We note similarities of our results with those of Golubkov et al [21] in In 2 O 3 . They suggested that electron heating was dominant on the insulating side of the perpendicular field tuned transition with θ = 5.…”
supporting
confidence: 91%
“…We note similarities of our results with those of Golubkov et al [21] in In 2 O 3 . They suggested that electron heating was dominant on the insulating side of the perpendicular field tuned transition with θ = 5.…”
supporting
confidence: 91%
“…In addition, the electric field scaling analysis in the case of InO x thin films 34 was reported to be successful, although θ was about 6 35 . Nevertheless, the same scaling in InO x failed with even smaller θ exponent of 5 36 . In addition, the electric field scaling in Bi thin films reported the product of ν ( z + 1 ) bigger than the expected value 37 .…”
mentioning
confidence: 84%
“…Heat-balance analysis. We next demonstrate, using the heatbalance approach (Equation (1)), that the I-V's are well described in terms of electron self-heating [12][13][14][15][22][23][24] . Inspecting Equation 1we see that the only unknown variable is T el , which we need to obtain independently.…”
Section: Resultsmentioning
confidence: 99%
“…2a to effective T el and plot the results in Fig. 2b 20,23,25 (see Supplementary Note 3 for a detailed description of the heatbalance analysis).…”
Section: Resultsmentioning
confidence: 99%