Electron theory of the optical properties of laser-excited semiconductors

Haug, H.; Schmitt‐Rink, S.

doi:10.1016/0079-6727(84)90026-0

Cited by 635 publications

(361 citation statements)

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“…Here, κ is the screening wavenumber [HAU84,MAH90], describing the screening of the Coulomb interaction potential by a surrounding charge-carrier plasma, which can be calculated in a self-consistent way [HAU84,HAU89]. The screening becomes very important at elevated charge-carrier densities where the unscreened Coulomb potential would greatly overestimate the interaction between the charge carriers.…”

Section: Coulomb-scattering Of Charge Carriersmentioning

confidence: 99%

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Lingnau

2015

Springer Theses

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In this thesis the dynamics and performance of optoelectronic devices based on semiconductor quantum-dots are investigated.In the first part, the dynamics of quantum-dot lasers under external perturbations is discussed. Using a microscopically based balance equation model that incorporates detailed charge-carrier scattering dynamics and the possibility to describe nonequilibrium between intra-band electronic states, the relaxation oscillations of the quantum-dot laser are investigated. Three qualitatively different dynamic regimes are identified in dependence of the scattering rates -the "constantreservoir" regime for slow scattering, the "overdamped" regime, and the "synchronized" regime for high scattering -characterized by a varying degree of nonequilibrium between the quantum-dot and reservoir states.Important differences to conventional lasers are found in the modulation response and the dynamics in optical injection and feedback setups. Common theoretical models and approaches used to describe these applications are shown to yield inaccurate predictions, especially in the "constant-reservoir" and "overdamped" dynamic regimes. An important consequence is that the amplitude-phase coupling in quantum-dot lasers, commonly described by the α-factor, differs from conventional descriptions due to the desynchronization of gain and refractive index. While the α-factor describes bifurcations of fixed points accurately, it fails in describing dynamic solutions and overestimates the extent of complex dynamics. The observed low sensitivity to optical perturbations in quantum-dot lasers can therefore be attributed partly to the charge-carrier nonequilibrium. Three quantum-dot laser models on different levels of sophistication are presented that can accurately describe the quantum-dot nonequilibrium dynamics.In the second part of the thesis, the performance of quantum-dot semiconductor optical amplifiers is investigated, and two types of applications unique to quantum-dots as active medium are discussed. The ground and excited states of the quantum-dots allow an ultra-broad-band amplification of optical data streams. Amplified signals on the ground-state frequencies are shown to generally exhibit higher quality than on the excited state, due to a lower sensitivity of the groundstate to carrier-density variations. Nevertheless the quantum-dot amplifier is found to allow effective amplification on both frequency ranges. Furthermore, a parameter range is identified that allows for a simultaneous amplification of data signals on the ground and excited state in a counter-propagating setup.The long microscopically polarization dephasing times in quantum-dots are found to enable quantum-coherent interactions on a macroscopic scale at room-temperature. By comparison with experiments, the occurrence of Rabi-oscillations by amplification of ultra-short pulses is demonstrated. Quantum-dot based devices could therefore be used for future applications based on quantum-coherent effects.

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Section: Coulomb-scattering Of Charge Carriersmentioning

confidence: 99%

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Lingnau

2015

Springer Theses

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“…13,14) Among diverse material systems, photoexcited electron-hole (e-h) systems in semiconductors offer a unique arena to study the rich variety of phases emergent in many particle systems, and their non-equilibrium dynamics. 4,15) One of the intriguing aspects of e-h systems is that the strength of inter-particle Coulomb interaction can be effectively controlled by changing the density of photoexcited carriers through the screening effect, by simply changing the excitation light intensity. The change of the Coulomb interaction causes a phase transition, or crossover, from the insulating exciton gas phase in the low density regime to the metallic e-h plasma in the high density regime, referred to as exciton Mott transition (EMT).…”

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confidence: 99%

Rate Equation Analysis of the Dynamics of First-order Exciton Mott Transition

Sekiguchi

Shimano

2017

J. Phys. Soc. Jpn.

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We performed a rate equation analysis on the dynamics of exciton Mott transition (EMT) with assuming a detailed balance between excitons and unbound electron-hole (e-h) pairs. Based on the Saha equation with taking into account the empirical expression for the band-gap renormalization effect caused by the unbound e-h pairs, we show that the ionization ratio of excitons exhibits a bistability as a function of total e-h pair density at low temperatures. We demonstrate that an incubation time emerges in the dynamics of EMT from oversaturated exciton gas phase on the verge of the bistable region. The incubation time shows a slowing down behavior when the pair density approaches toward the saddle-node bifurcation of the hysteresis curve of the exciton ionization ratio.Photocontrol of condensed matter systems has gained continuing interests over decades, [1][2][3] e.g. in semiconductors, 4,5) Mott insulators, 3,6-9) spin crossover complexes, [10][11][12] and superconductors. 13,14) Among diverse material systems, photoexcited electron-hole (e-h) systems in semiconductors offer a unique arena to study the rich variety of phases emergent in many particle systems, and their non-equilibrium dynamics. 4,15) One of the intriguing aspects of e-h systems is that the strength of inter-particle Coulomb interaction can be effectively controlled by changing the density of photoexcited carriers through the screening effect, by simply changing the excitation light intensity. The change of the Coulomb interaction causes a phase transition, or crossover, from the insulating exciton gas phase in the low density regime to the metallic e-h plasma in the high density regime, referred to as exciton Mott transition (EMT). There is a long-standing argument whether EMT is a crossover or a first-order phase transition accompanied by a bistability at sufficiently low temperatures. [16][17][18][19][20][21][22] In general, bistability appears in diverse systems such as electronic circuits, optoelectronic systems, magnetic systems, molecular and biological systems, etc. Figure

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“…The choice of inversion factor further guarantees that the cross-over from absorption to gain takes place exactly at the total chemical potential, which allows an application of the KuboMartin-Schwinger (KMS) relation [15,[23][24] to deliver an analytical expression for the optical photoluminescence spectra ( ) L ω , valid under linear and nonlinear excitation conditions such as in nonlinear pump and probe luminescence experiments [15,25].…”

Section: Mathematical Approach and Model Equationsmentioning

confidence: 99%