AIII-BV semiconductors have been considered for decades to be a promising material in overcoming the limitations of silicone semiconductor devices. One of the important aspects within AIII-BV semiconductor technology are gold-semiconductor interactions on the nanoscale, since Au is widely used to catalyze the growth of AIII-BV nanostructures.We report on the chemical interactions of Au atoms with AIII-BV semiconductor crystals by an investigation of the nanostructures formation in the process of thermally-induced Au self-assembly on various AIII-BV surfaces, and this by means of atomically resolved HAADF STEM measurements. We have found that the formation of nanostructures is a consequence of the surface diffusion and nucleation of adatoms produced by Au induced chemical reactions on AIII-BV semiconductor surfaces. Only for InSb crystal we have found that there is efficient diffusion of Au atoms into the bulk, which we 2/31 experimentally studied by Machine Learning HAADF STEM image quantification. The process of Au dissolution in InSb lattice has been additionally characterized by DFT calculations with inclusion of finite temperature effects. Furthermore, based on the stoichiometry of nanostructures grown, the effective number of Au atoms needed to release one AIII metal atom has been estimated. The experimental finding reveals a difference in the Au interactions with In-and Ga-based groups of AIII-BV semiconductors. Our comprehensive and systematic studies uncover the details of the Au interactions with the AIII-BV surface at the atomic level with chemical sensitivity.AIII-BV semiconductors due to their unique properties, such as high electron mobility and direct bandgap, are being considered material for the new generation of nanoscale electronic devices 1-4 .Recently, new technologies were developed such as template-assisted selective epitaxy (TASE) by IBM Zurich group 5 and epitaxial lift off (ELO) technique 6 to integrate AIII-BV with Si at the nanoscale. This will allow one to expand the use of AIII-BV crystals by extending the conventional Si-based technology for future AIII-BV/Si nanodevice fabrication 7 . For many applications the arrays of standing, vertically aligned AIII-BV nanowires grown on semiconductor surfaces are desired [8][9][10] . A device for efficient water splitting can be built from such AIII-BV nanowires arrays 11,12 . Also the AIII-BV nanowire LED device integrated on Si has been developed, with 3 orders of magnitude higher efficiency than the conventional device 13 . To control the physico-chemical properties of the devices local information on the atomic arrangement is necessary as has recently been shown by atomic resolution spectrum imaging in STEM 14 .The growth of such monocrystalline AIII-BV nanowires is mainly catalyzed by Au seeded nanoparticles 15 . Studies on the role of Au in the process of nanowires growth, in a closed system being in equilibrium, have been performed by Dick et al. 16 . They have shown that deposited Au is not inert with respect to AIII-BV material and i...