Electron transmission through suspended graphene membranes measured with a low-voltage gated Si field emitter array

Rughoobur, Girish; Jain, Lay; Akinwande, Akintunde I.

doi:10.1088/1361-6528/abf5fb

Cited by 2 publications

(3 citation statements)

References 29 publications

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“…It is calculated from eq 2. 27,43,66 Here, B = 6.87 × 10 7 and ⌀ is the work function of metal. The β is affected in electron tunneling, and a higher value means more electron emission.…”

Section: Resultsmentioning

confidence: 99%

“…The factor is related to the electrode’s geometric parameters such as radius and length. It is calculated from eq . ,, b FN = 0.95 B ⌀ 3 / 2 β Here, B = 6.87 × 10 7 and ⌀ is the work function of metal. The β is affected in electron tunneling, and a higher value means more electron emission.…”

Section: Resultsmentioning

confidence: 99%

“…Moreover, the sealing size level is still at the micrometer level or even a millimeter scale. Recently, emerging materials were used for vacuum enclosure such as graphene which has high transparency and ultrathin thickness. − Therefore, it is possible to pass the electric field and electrons. So, it works as an electrode (grid) and as vacuum encapsulation.…”

mentioning

confidence: 99%

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Vacuum Tunneling Transistor with Nano Vacuum Chamber for Harsh Environments

Heo,

Shin,

Jun

et al. 2023

ACS Nano

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A nano vacuum tube which consists of a vacuum transistor and a nano vacuum chamber was demonstrated. For the device, a vacuum region is an electron transport channel, and a vacuum is a tunneling barrier. Tilted angle evaporation was studied for the formation of the nano level vacuum chamber structure. This vacuum tube was ultraminiaturized with several tens of 10–18 L scale volume and 10–6 Torr of pressure. The device structure made it possible to achieve a high integration density and to sustain the vacuum state in various real operations. In particular, the vacuum transistor performed stably in extreme external environments because the tunneling mechanism showed a wide range of working stability. The vacuum was sustained well by the sealing layer and provided a defect-free tunneling junction. In tests, the high vacuum level was maintained for more than 15 months with high reliability. The Al sealing layer and tube structure can effectively block exposed light such as visible light and UV, enabling the stable operation of the tunneling transistor. In addition, it is estimated that the structure blocks approximately 5 keV of X-ray. The device showed stable operating characteristics in a wide temperature range of 100–390 K. Therefore, the vacuum tube can be used in a wide range of applications involving integrated circuits while resolving the disadvantages of a large volume in old vacuum tubes. Additionally, it can be an important solution for next-generation devices in various fields such as aerospace, artificial intelligence, and THz applications.

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Section: Resultsmentioning

confidence: 99%