A series of merocyanine dyes with a wide range of molecular dipole moments were deposited on metal oxides covering a wide work function (Φ) range (2.3 to 7.0 eV), and the energy level alignment at these interfaces was studied with photoelectron spectroscopy. We find that a preferential orientation of the merocyanines and their dipoles in the monolayer systematically lowers Φ of the oxides such that Fermi-level (E F ) pinning at the highest occupied molecular level of the merocyanines only occurs for very high Φ oxides (≥6 eV). Correspondingly, pinning at the electron affinity level can readily be achieved also with moderate oxide Φ, e.g., for indium tin oxide, and electron transfer between the merocyanines to these oxides can proceed readily. Noteworthy, the E F -pinning behavior and the associated Φ values seem independent of the molecular dipole moment magnitude, most likely due to the self-limiting effect of Φ as soon as the pinning regime is reached.
■ INTRODUCTIONMerocyanine dyes are molecules consisting of a donor (D) and an acceptor (A) part providing a strong dipolar character and high polarizability to these D−A molecules, enabling high absorption coefficients and tunable electronic character from polyene-to polymethine-type chromophores. 1−3 These properties make merocyanines naturally attractive for application in organic photovoltaics and particularly dye-sensitized solar cells (DSSCs). 4−9 Despite its importance for efficient charge collection, the energy level alignment at the D−A dye/ electrode interfaces has not yet been studied extensively, 10−16 and the mechanisms (particularly including the effects due to the molecular dipoles) that determine the interface electronic properties remain to be established, which will then allow correlation with device performances. 17−20 To achieve low resistance electrical contacts in organic (opto-) electronic devices, a proper matching of the electrode Fermi level (E F ) to the charge transport levels of the organic semiconductor is necessary. 21−23 Within the Schottky−Mott limit, i.e., assuming vacuum level alignment, one might try estimating the relative position of the energy levels at the interface simply from the values of the electrode work function (Φ) as well as the ionization energy (IE) and electron affinity (EA) of the organic semiconductor. However, for interfaces between organic semiconductors and metals, the invalidity of vacuum level alignment is established meanwhile. 23,24 For chemically passivated metal substrates or inert nonmetallic electrodes, it was found that vacuum level alignment does hold as long as Φ is within the limits set by the critical work function values for Fermi level pinning at the lowest unoccupied and highest occupied energy levels (Φ pin-and Φ pin+ , respectively), which are in principle specific to every organic semiconductor but in practice defined by the sample structure and composition dependent density of states distribution near the frontier energy levels, i.e., the gap state distribution. 25,26 However, if the samp...