Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates

Gaška, R.; Yang, J.; Osinsky, A.; Chen, Q.; Khan, M. Asif; Orlov, Alexei O.; Snider, Gregory L.; Shur, M. S.

doi:10.1063/1.120852

Cited by 203 publications

(96 citation statements)

References 15 publications

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“…For the heterostructure grown on the GaN single-crystal substrate, the Hall measurements yield a 77 K mobility of 30 000 cm 2 /V s and a 1.5 K mobility of 60 100 cm 2 /V s. For comparison, we also show in Fig. 1 the best results obtained for the heterostructures grown on sapphire by Smorchkova et al 4 and on 6H-SiC by Gaska et al 3 As it is seen in Fig. 1, heterostructures grown on GaN and sapphire substrates show a strong decrease of the electron concentration and an increase of carrier mobility with decreasing temperature.…”

mentioning

confidence: 49%

“…For example, Gaska et al 3 reached a room-temperature mobility slightly over 2000 cm 2 /V s (n s ϭ1.3ϫ10 12 cm Ϫ2 ) in an Al 0.2 Ga 0.8 N/GaN structure deposited on 6H-SiC substrate by low-pressure metalorganic vapor-phase epitaxy. Smorchkova et al 4 succeeded in obtaining a mobility of 51 700 cm 2 /V s at 13 K in Al 0.09 Ga 0.91 N/GaN structure grown on sapphire by rf plasma-assisted molecular-beam epitaxy ͑MBE͒, with a 2DEG density of 2.2ϫ10 12 cm Ϫ2 .…”

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confidence: 99%

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High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates

Frayssinet

Knap

Lorenzini

et al. 2000

Applied Physics Letters

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129

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Dislocation-free high-quality AlGaN/GaN heterostructures have been grown by molecular-beam epitaxy on semi-insulating bulk GaN substrates. Hall measurements performed in the 300 K–50 mK range show a low-temperature electron mobility exceeding 60 000 cm2/V s for an electron sheet density of 2.4×1012 cm−2. Magnetotransport experiments performed up to 15 T exhibit well-defined quantum Hall-effect features. The structures corresponding to the cyclotron and spin splitting were clearly resolved. From an analysis of the Shubnikov de Hass oscillations and the low-temperature mobility we found the quantum and transport scattering times to be 0.4 and 8.2 ps, respectively. The high ratio of the scattering to quantum relaxation time indicates that the main scattering mechanisms, at low temperatures, are due to long-range potentials, such as Coulomb potentials of ionized impurities.

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confidence: 49%

mentioning

confidence: 99%

High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates

Frayssinet

Knap

Lorenzini

et al. 2000

Applied Physics Letters

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129

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“…However, there is still a lack of a suitable substrate for GaN-based devices to fully exploit their superior properties. Thus far, there have been a large number of studies concerned with the growth of GaN films on highly lattice-mismatched substrates, such as sapphire [5], SiC [6], or Si [7]. Among these materials, silicon has many advantages compared to SiC and sapphire due to its high crystal quality, low cost, good electrical and thermal conductivity, and large-area size as a substrate for the growth of GaN, AlGaN epitaxial layers [8,9].…”

Section: Introductionmentioning

confidence: 99%

The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate

et al. 2008

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In the present paper, the effect of in-situ substrate nitridation time on crystalline quality of GaN films grown on Si (111) substrates by metal organic chemical vapor deposition (MOCVD) were investigated. A thin buffer layer of silicon nitride (SiN x ) with various thicknesses was achieved through the nitridation of substrate at different nitiridation times ranging from 0 to 660 s. The structural characteristics, such as dislocation densities, correlation lengths of columnar crystallites, the tilt and twist of the mosaic structure, and the angles of rotational disorder, were all studied in detail by using a planar and cross-sectional view of high resolution transmission electron microscopy (HRTEM) and X-ray diffraction (HRXRD) performed at different scattering geometries. It was found that the dislocation densities, lateral coherence lengths, vertical coherence lengths, and the tilt and

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“…This fact causes a high level of in-plane stress and threading dislocation density ͑DD͒ generation, as grown by metal-organic chemical vapor deposition ͑MOCVD͒ in the GaN epitaxial layer. [7][8][9] These dislocations affect the performance reliability of the device. 1,2 Furthermore, it is well known that GaN usually has a high DD, much more than those in Si and GaAs semiconductors.…”

Section: Introductionmentioning

confidence: 99%

“…4 High-quality AlGaN/GaN heterostructures have been shown to contain twodimensional electron gas ͑2DEG͒, which has attracted special interest due to its potential applications in high mobility transistors operating at high power and high temperature levels. 5,6 The device structures are usually grown on highly lattice-mismatched substrates, such as sapphire, 7 SiC, 8 or Si. 3,9 It still remains difficult to obtain a high-quality GaN epilayer because of the large lattice mismatch and large difference in the thermal expansion coefficients between the GaN film, sapphire, and SiC substrate.…”

Section: Introductionmentioning

confidence: 99%

Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures

Arslan

Altındal

Özçelik

et al. 2009

Journal of Applied Physics

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The current-transport mechanisms in ͑Ni/ Au͒ -Al 0,22 Ga 0,78 N / AlN/ GaN heterostructures were studied by using temperature dependent forward-bias current-voltage ͑I-V͒ characteristics in the temperature range of 80-410 K. In order to determine the current mechanisms for ͑Ni/ Au͒ -Al 0,22 Ga 0,78 N / AlN/ GaN heterostructures, we fitted the experimental I-V data to the analytical expressions given for the current-transport mechanisms in a wide range of applied biases and at different temperatures. The contributions of thermionic-emission, generation-recombination, tunneling, leakage currents that are caused by inhomogeneities, and defects at the metal-semiconductor interface current mechanisms were all taken into account. The best fitting results were obtained for the tunneling current mechanism. On the other hand, we did not observe sufficient agreement between the experimental data and the other current mechanisms. The temperature dependencies of the tunneling saturation current ͑I t ͒ and tunneling parameters ͑E 0 ͒ were obtained from fitting results. We observed a weak temperature dependence of the saturation current and the absence of the temperature dependence of the tunneling parameters in this temperature range. The results indicate that in the temperature range of 80-410 K, the mechanism of charge transport in the ͑Ni/ Au͒ −Al 0.22 Ga 0.78 N / AlN/ GaN heterostructure is performed by tunneling among those dislocations intersecting the space charge region. The dislocation density ͑D͒ that was calculated from the I-V characteristics, according to a model of tunneling along the dislocation line, gives the value of 0.24ϫ 10 7 cm −2 . This value is close in magnitude to the dislocation density that was obtained from the x-ray diffraction measurements.

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Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates

Cited by 203 publications

References 15 publications

High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates

High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates

The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate

Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures

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