We present a new analytical model for the threshold voltage V th of the molecular assembly system (MAS) made of bis(1,4-dithiolbenzene) in a parallel arrangement. The relationship between V th and the temperature T associated with the intermolecular coupling effect is investigated under various geometrical MAS structures. The results show a linear relationship between V th and T with an average slope of %0.0042 V/K and Y-intercept in the interval of 2.2584-3.4236 V described by polynomial regression of order 5. V th decreases linearly by approximately 1.2 V when the temperature changes from 50 to 325 K. At constant temperature, when the intermolecular spacing d decreases from 6.9 to 3.3 Å, strengthening π-orbital interactions further reduce the threshold voltage. This approach of modeling the temperature effects in a linear form significantly simplifies the model parameter extraction of MAS devices, which is an important and useful guideline for the design of future nanoscale devices.