Electron transport in nanocrystalline SiC films obtained by direct ion deposition

Kozlovskyi, A. A.; Семенов, А. А.; Skorik, S.

doi:10.1016/j.spmi.2016.10.013

Cited by 8 publications

(2 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The method of electrodeposition from molten salt represented by this model has a number of advantages over other methods for producing thin films [8]. Among the advantages of the method, one can note a high film deposition rate (about 1 µm per min), and the possibility of obtaining multilayer films with control over the thickness of each layer, which depends on time and change in the applied voltage.…”

Section: Introductionmentioning

confidence: 99%

Molecular Dynamics Simulation of Thin Silicon Carbide Films Formation by the Electrolytic Method

Галашев

Abramova

2023

Materials

View full text Add to dashboard Cite

Silicon carbide is successfully implemented in semiconductor technology; it is also used in systems operating under aggressive environmental conditions, including high temperatures and radiation exposure. In the present work, molecular dynamics modeling of the electrolytic deposition of silicon carbide films on copper, nickel, and graphite substrates in a fluoride melt is carried out. Various mechanisms of SiC film growth on graphite and metal substrates were observed. Two types of potentials (Tersoff and Morse) are used to describe the interaction between the film and the graphite substrate. In the case of the Morse potential, a 1.5 times higher adhesion energy of the SiC film to graphite and a higher crystallinity of the film was observed than is the case of the Tersoff potential. The growth rate of clusters on metal substrates has been determined. The detailed structure of the films was studied by the method of statistical geometry based on the construction of Voronoi polyhedra. The film growth based on the use of the Morse potential is compared with a heteroepitaxial electrodeposition model. The results of this work are important for the development of a technology for obtaining thin films of silicon carbide with stable chemical properties, high thermal conductivity, low thermal expansion coefficient, and good wear resistance.

show abstract

Section: Introductionmentioning

confidence: 99%

Molecular Dynamics Simulation of Thin Silicon Carbide Films Formation by the Electrolytic Method

Галашев

Abramova

2023

Materials

View full text Add to dashboard Cite

show abstract

“…Previously, it was found that nc-SiC films containing a single predominant polytype (monopolytype) show the thermoactivation conductivity mechanism, and the films containing a mixture of polytypes (heteropolytype) demonstrate two-channel conductivity mechanism, one of which is based on the tunneling of electrons through the barrier between nanocrystals of different polytypes [8]. Radiation resistance of such films was studied by us earlier [9].…”

Section: Introductionmentioning

confidence: 99%

Gas sensing properties of nanocrystalline silicon carbide films

Семенов

Kozlovskyi

Skorik

et al. 2019

Micro and Nano Syst Lett

View full text Add to dashboard Cite

The influence of the air atmosphere on the electrical conductivity of nanocrystalline thin SiC films obtained by method of direct ion deposition on sapphire was studied. Measurements were performed on two series of nc-SiC films with different structure: one series contained mainly 3C-SiC polytype nanocrystals and were denoted as monopolytypic, the second series were a nanoheterostructures based on a mixture of 3C-SiC and 21R-SiC nanocrystals. Gas sensitivity of the films appeared after annealing in vacuum at temperatures above 500 K. Measurements of the gas sensitivity of the films to the air atmosphere at a temperature of 700 K showed that the resistance increased for 12 times for the monopolytype film, while the heteropolytype film showed an increase of resistance for almost 16 times. Keywords: Silicon carbide based gas sensors, Nanocrystalline silicon carbide film, Air effect on electrical resistance, Structure effect on air sensitivity © The Author(s) 2019. This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

show abstract