Electron transport in narrow-gap semiconductors

Curby, R. C.; Ferry, D. K.

doi:10.1002/pssa.2210200218

Cited by 13 publications

(6 citation statements)

References 11 publications

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“…ε and ε are electron energies before and after scattering. Other markings are the same as in [12,13]. For simplicity, it was assumed that after the ionization the energies of both electrons are distributed randomly: ε = r * (ε − ε th ), where ε th is the threshold energy of ionization, r * is the random number.…”

Section: The Monte Carlo Methods and Parametersmentioning

confidence: 99%

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Monte Carlo calculations of the electron impact ionization in n-type InSb crystal

Ašmontas¹,

Raguotis²,

Bumelienė³

2013

Semicond. Sci. Technol.

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Monte Carlo computer simulations of electron impact ionization in InSb crystal are carried out for both instantly switched on dc and high-frequency electric fields. It is established that the rate of generation of electron-hole pairs decreases with the increase of electric field frequency, due to the inertia of electron heating by high-frequency electric field. For fields oscillating at frequencies much higher than the reciprocal momentum relaxation time, the impact ionization threshold field is found to be a linear function of frequency. Good agreement between calculations and available experimental data has been obtained.

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Section: The Monte Carlo Methods and Parametersmentioning

confidence: 99%

“…The first Monte Carlo calculations of electron transport properties in the presence of impact ionization were performed earlier [12,13] In these papers, only the scattering of an electron initiating ionization was considered. The contribution of created secondary electrons was neglected.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo calculations of the electron impact ionization in n-type InSb crystal

Ašmontas¹,

Raguotis²,

Bumelienė³

2013

Semicond. Sci. Technol.

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“…Curby and Ferry were the first to report Monte Carlo study on transport properties and impact ionization rate induced in n-InAs by strong dc electric fields at 77 K [39,40]. In these investigations, only scattering of electrons initiating the ionization process was taken into account, while contribution of the generated electrons was neglected.…”

Section: Introductionmentioning

confidence: 99%

Intense terahertz pulse-induced impact ionization and electron dynamics in InAs

Ašmontas¹,

Bumelienė²,

Gradauskas³

et al. 2019

Semicond. Sci. Technol.

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Electron dynamics and impact ionization are investigated by Monte Carlo method in n-type InAs exposed to intense ultrashort terahertz pulse at 300 K temperature. The sequence of hot electron transfer between the Γ and upper L and X valleys is established: hot electrons of the Γ valley transfer firstly to the L valley, and then they are scattered to the X valley. Electron population in the valleys and characteristic time of their redistribution between the Γ, L and X valleys is investigated in strong electric fields. It is found that the threshold electric field of impact ionization increases with shorter THz pulses. The process of impact ionization is shown to be the dominant energy loss mechanism of hot electrons having energy larger than the threshold energy of impact ionization. Good agreement between the results of calculation and available experimental data is demonstrated.

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“…It enables the exact solution to be obtained for the Boltzmann kinetic equation in a wide range of electric fields [9,10]. With the help of the Monte Carlo method, it was shown that the streaming-like distribution function of electrons can be formed in polar semiconductors in a dc electric field with the amplitude E ∼ E (str) [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Electrical and High-Frequency Properties of Compensated GaN under Electron Streaming Conditions

Syngayivska¹,

Korotyeyev²

2013

Ukr. J. Phys.

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Conditions required for the streaming effect and the optical-phonon transit-time resonance to take place in a compensated bulk GaN are analyzed in detail. Monte Carlo calculations of the high-frequency differential electron mobility are carried out. It is shown that the negative dynamic differential mobility can be realized in the terahertz frequency range, at low lattice temperatures of 30-77 K, and applied electric fields of 3-10 kV/cm. New manifestations of the streaming effect are revealed, namely, the anisotropy of the dynamic differential mobility and a specific behavior of the diffusion coefficient in the direction perpendicular to the applied electric field. The theory of terahertz radiation transmission through the structure with an epitaxial GaN layer is developed. Conditions for the amplification of electromagnetic waves in the frequency range of 0.5-2 THz are obtained. The polarization dependence of the radiation transmission coefficient through the structure in electric fields above 1 kV/cm is found.

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Electron transport in narrow-gap semiconductors

Cited by 13 publications

References 11 publications

Monte Carlo calculations of the electron impact ionization in n-type InSb crystal

Monte Carlo calculations of the electron impact ionization in n-type InSb crystal

Intense terahertz pulse-induced impact ionization and electron dynamics in InAs

Electrical and High-Frequency Properties of Compensated GaN under Electron Streaming Conditions

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