Electron Transport in Submicron Wires of Semiconductors

Wróbel, J.

doi:10.12693/aphyspola.90.691

Cited by 4 publications

(6 citation statements)

References 23 publications

(35 reference statements)

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“…Surprisingly, however, there have been experimental data obtained by our group some time ago, showing pronounced nonlocal resistances and reproducible magnetoresistance fluctuations in microstructures of PbTe and PbSe epilayers deposited on BaF 2 substrates (see Fig. 1) [31,32]. Similar effects were also reported by others for wide quantum wells of PbTe [33].…”

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confidence: 84%

“…In the first part of this work we present results of new careful transport measurements carried out on the previously [31,32] studied PbTe epilayers. Our findings demonstrate that the nonlocal resistance does not result from the edge channel transport, but originates from the presence of an additional conducting layer brought about by threading dislocations and/or the doping by the substrate material, in the interfacial region of the epilayers adjacent to the lattice mismatched BaF 2 substrate.…”

Section: Introductionmentioning

confidence: 99%

“…3 Reexamination of results for PbSe and PbTe epilayers Some time ago, we studied electron transport properties of PbSe and PbTe microstructures patterned of n-type epilayers deposited on BaF 2 substrates [31,32]. The initial layer thicknesses were of the order of 1 mm, electron concentrations were in the range from 6 Â 10 16 to 6 Â 10 17 cm À3 and Hall mobilities were between 1.2 Â 10 3 and 2 Â 10 5 cm 2 Vs À1 .…”

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confidence: 99%

“…In order to reveal the origin of these anomalies, we have performed additional transport studies using three different PbTe samples, grown and processed according to the procedure described elsewhere [31,32,57]. The layers have been patterned into a Hall bridges with dimensions L ¼ 1000 mm and W ¼ 100 mm (see Fig.…”

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Absence of nonlocal resistance in microstructures of PbTe quantum wells

Kolwas

Grabecki

Trushkin

et al. 2012

Physica Status Solidi (b)

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We report on experiments allowing to set an upper limit on the magnitude of the spin Hall effect and the conductance by edge channels in quantum wells of PbTe embedded between PbEuTe barriers. We reexamine previous data obtained for epitaxial microstructures of n-type PbSe and PbTe, in which pronounced nonlocal effects and reproducible magnetoresistance oscillations were found. Here we show that these effects are brought about by a quasi-periodic network of threading dislocations adjacent to the BaF 2 substrate, which give rise to a p-type interfacial layer and an associated parasitic parallel conductance. We then present results of transport measurements on microstructures of modulation doped PbTe/(Pb,Eu)Te:Bi heterostructures for which the influence of parasitic parallel conductance is minimized, and for which quantum Hall transport had been observed, on similar samples, previously. These structures are of H-shaped geometry and they are patterned of 12 nm thick strained PbTe quantum wells embedded between Pb 0.92 Eu 0.08 Te barriers. The structures have different lateral sizes corresponding to both diffusive and ballistic electron transport in non-equivalent L valleys. For these structures no nonlocal resistance is detected confirming that PbTe is a trivial insulator. The magnitude of spin Hall angle g is estimated to be smaller than 0.02 for PbTe/PbEuTe microstructures in the diffusive regime.

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confidence: 84%

Section: Introductionmentioning

confidence: 99%

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confidence: 99%

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Absence of nonlocal resistance in microstructures of PbTe quantum wells

Kolwas

Grabecki

Trushkin

et al. 2012

Physica Status Solidi (b)

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“…Wires are fabricated by means of 30 keV e-beam lithography [5], followed by wet etching in 0.5% solution of Br 2 in ethylene glycol. Precise atomic force microscope (AFM) measurements showed their cross-section of side 0.3 m.…”

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Dimensional Crossovers in Magnetoresistance of Submicron Films and Wires of CdTe:In

et al. 1996

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We present millikelvin studies of magnetoresistance for epitaxial films and wires of CdTe : In. In comparison to the data with theoretical predictions for the weakly localized regime we put into the evidence the presence of the temperature-induced dimensional crossovers in the studied systems. Our measurements probe the electron phase-breaking rate and indicate that the main dephasing mechanism arises from electron scattering from thermal fluctuations of three-or two-dimensional electron liquid.PACS numbers: 71.55.Jv Doped semiconduction have proved their usefulness for studies of the quantum corrections to the conductivity of disordered systems. It is now well established that these corrections are dominated by phenomenon known as weak localization (WL) [1], and by disorder-modified electron-electron interactions (EEI). WL arises from constuctive interference of self-crossing electron paths. Such a path has its time-reversal analog with a fixed relative phase (zero in the absence of the magnetic field B = 0). The resulting constuctive interference gives rise to backscattering and decreases conductivity. WL is extremely sensitive to inelastic scattering events such as electron-electron and electron-phonon scattering which randomize electron phases.

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