Electron trap memory characteristics of LiNbO3 film/AlGaN/GaN heterostructure

Hao, Lanzhong; Zhu, Jing; Luo, Wenbo; Zeng, Hongxin; Li, Y. R.; Zhang, Y.

doi:10.1063/1.3294308

Cited by 15 publications

(7 citation statements)

References 22 publications

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“…Using the measured accumulation capacitance of 55.57 pF, the dielectric constant of the LNO film was calculated as 30, which is close to the value of single-crystal LNO [32]. According to the experimental results of CV curves, the interface state density D it of the LNO/recessed AlGaN/GaN was evaluated as 3.1 × 10 11 cm −2 eV −1 , which was lower than the previously reported interface state density value of the LNO/AlGaN/GaN heterostructure [21]. It revealed that the interface traps between the LNO film and the AlGaN layer was indeed passivated using (NH 4 ) 2 S x treatment.…”

Section: Fabrication and Performances Of Linbo 3 /Algan/gan E-mosupporting

confidence: 61%

“…It revealed that the interface traps between the LNO film and the AlGaN layer was indeed passivated using (NH 4 ) 2 S x treatment. In addition, it was deduced that the hysteresis characteristic was major attributed to the interface traps rather than the influence from the LNO film without Li-deficient phase [21].…”

Section: Fabrication and Performances Of Linbo 3 /Algan/gan E-momentioning

confidence: 99%

“…The high dielectric constant LNO film with a wider bandgap of 3.9 eV and a smaller electron affinity of 1.1 eV was beneficial for reducing the gate leakage [20]. In addition, the LNO film on the GaN-based semiconductor had a low interface state density [21]. Therefore, the LNO film is a promising candidate of the ferroelectric gate oxide layer.…”

Section: Introductionmentioning

confidence: 99%

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GaN-Based Enhancement-Mode Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using LiNbO₃Ferroelectric Insulator on Gate-Recessed Structure

Lee

Yang

Tseng

et al. 2015

IEEE Trans. Electron Devices

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To fabricate AlGaN/gallium nitride (GaN) enhancement-mode metal-oxide-semiconductor high-electron mobility transistors (E-MOSHEMTs), the gate-recessed structure and the LiNbO 3 ferroelectric film were utilized in this paper. The LiNbO 3 ferroelectric films deposited on the photoelectrochemically etched gate-recessed regions of the AlGaN/GaN E-MOSHEMTs as the gate insulator using a pulsed laser deposition system. The polarization-induced charges of the 2-D electron gas resided on the interface between the AlGaN and GaN layers could be modulated by the C + domains of the crystalline (006) LiNbO 3 ferroelectric films annealed in an oxygen ambience at 600°C for 30 min. When the 15-nm-thick AlGaN was formed in the gate-recessed regions, the threshold voltage and the maximum transconductance of the resulting gate-recessed LiNbO 3 /AlGaN/GaN E-MOSHEMTs were +0.40 V and 56.0 mS/mm, respectively. Furthermore, the flicker noise was the dominant noise in the resulting E-MOSHEMTs. The associated normalized low-frequency noise power density of 8.1 × 10 11 Hz −1 was measured.Index Terms-AlGaN/gallium nitride (GaN) enhancementmode metal-oxide-semiconductor high-electron mobility transistors (E-MOSHEMTs), gate-recessed structure, LiNbO 3 ferroelectric gate insulator, photoelectrochemical (PEC) etching method, polarization-induced charges.

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Section: Fabrication and Performances Of Linbo 3 /Algan/gan E-mosupporting

confidence: 61%

Section: Fabrication and Performances Of Linbo 3 /Algan/gan E-momentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

GaN-Based Enhancement-Mode Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using LiNbO₃Ferroelectric Insulator on Gate-Recessed Structure

Lee

Yang

Tseng

et al. 2015

IEEE Trans. Electron Devices

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“…The origin of V th shift under positive pulse in gate is owing to tunneling induced electron transport from two dimensional electron (2-DEG) gas to bulk traps. 18 The tunneling induced electron transfer effect in GaN/AlGaN/Gd 2 O 3 (crystalline)/Ni-Au structure opens up a way to design GaN/AlGaN based memory device and have already been studied previously. 19 During positive gate voltage stress at RT and 100…”

Section: Resultsmentioning

confidence: 99%

Investigation of temperature dependent threshold voltage variation of Gd2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure

2012

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Temperature dependent threshold voltage (Vth) variation of GaN/AlGaN/Gd2O3/Ni-Au structure is investigated by capacitance-voltage measurement with temperature varying from 25°C to 150°C. The Vth of the Schottky device without oxide layer is slightly changed with respect to temperature. However, variation of Vth is observed for both as-deposited and annealed device owing to electron capture by the interface traps or bulk traps. The Vth shifts of 0.4V and 3.2V are obtained for as-deposited and annealed device respectively. For annealed device, electron capture process is not only restricted in the interface region but also extended into the crystalline Gd2O3 layer through Frenkel-Poole emission and hooping conduction, resulting in a larger Vth shift. The calculated trap density for as-deposited and annealed device is 3.28×1011∼1.12×1011 eV−1cm−2 and 1.74×1012∼7.33×1011 eV−1cm−2 respectively in measured temperature range. These results indicate that elevated temperature measurement is necessary to characterize GaN/AlGaN heterostructure based devices with oxide as gate dielectric.

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“…The smooth surface of the amorphous layer during deposition or crystallization of the layer is a key factor determining the quality of the texture . A similar approach, used in the literature for the growth of Z‐ LN/LT on Si substrates, consists of growing of a buffer layer with a lattice matching to the LN/LT lattice and with a highly anisotropic growth rate such as (0001) ZnO, (111) Pt, and (111)MgO . An original approach used to obtain C‐ LN/LT films on Si is the application of an in situ electric field of 7–8 V cm −1 during PLD, which forced the texture along the polarization axis, as the growing LN layers were ferroelectric at deposition temperature .…”

Section: Growth Of Linbo3 and Litao3 Films By Chemical And Physical Mmentioning

confidence: 99%

Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications

Bartasyte

Margueron

Baron

et al. 2017

Adv Materials Inter

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In 1928, Zachariasen discovered the LiNbO 3 phase. [1] The first single crystals were grown using the flux method by Matthias Over the past five decades, LiNbO 3 and LiTaO 3 single crystals and thin films have been studied intensively for their exceptional acoustic, electro-optical, and pyroelectric and ferroelectric properties. Today, LiNbO 3 single crystals in electro-optics are equivalent to silicon in electronics, and about 70% of radio-frequency (RF) filters, based on surface acoustic waves, are fabricated on these single crystals. These materials in the form of thin films are needed urgently for the development of the next-generation of high-frequency and/or wide-band RF filters or tuneable frequency filters adapted to the fifth generation of infrastructures/networks/communications. The integration of LiNbO 3 films in guided nanophotonic devices will allow higher operational frequencies, wider bandwidth, and miniaturized optical devices in line with improved electronic conversion. Here, the challenges and the achievements in the epitaxial growth of LiTaO 3 and LiNbO 3 thin films and their integration with silicon technology and to acoustic and guided nanophotonic devices are discussed in detail. The systematic representation and classification of all epitaxial relationships reported in the literature have been carried out in order to help the prediction of the epitaxial orientations in the new heterostructures. Future prospects of potential applications and the expected performances of thin film devices are overviewed, as well.Figure 2. Schematic representation of the layer transfer process by the ion slicing technique consisting of a) ion implantation, b) wafer bonding, c) laser irradiation or heating in order to obtain d) a single crystalline layer on the host (Si) substrate. Reproduced with permission. [53]Figure 3. a,b) Electron microscopy images and c) schematic diagram of a microresonator based on LiNbO 3 film on Si and fabricated by the layer transfer technique. Reproduced with permission. [53]The first reports on the growth of c-axis-oriented LN films by liquid phase epitaxy on an LT substrate and by RF sputtering Adv. Mater. Interfaces 2017, 4, 1600998 www.advmatinterfaces.de www.advancedsciencenews.com Figure 6. Frequency response of a) HBAR and b) FBAR based on thinned X-cut LiNbO 3 layer on Si. Schematic representations of a) HBAR and b) FBAR structures are given in the insets. Reproduced with permission. [78]

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Electron trap memory characteristics of LiNbO3 film/AlGaN/GaN heterostructure

Cited by 15 publications

References 22 publications

GaN-Based Enhancement-Mode Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using LiNbO₃Ferroelectric Insulator on Gate-Recessed Structure

GaN-Based Enhancement-Mode Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using LiNbO₃Ferroelectric Insulator on Gate-Recessed Structure

Investigation of temperature dependent threshold voltage variation of Gd2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure

Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications

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Electron trap memory characteristics of LiNbO3 film/AlGaN/GaN heterostructure

Cited by 15 publications

References 22 publications

GaN-Based Enhancement-Mode Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using LiNbO3Ferroelectric Insulator on Gate-Recessed Structure

GaN-Based Enhancement-Mode Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using LiNbO3Ferroelectric Insulator on Gate-Recessed Structure

Investigation of temperature dependent threshold voltage variation of Gd2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure

Toward High‐Quality Epitaxial LiNbO3 and LiTaO3 Thin Films for Acoustic and Optical Applications

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Product

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GaN-Based Enhancement-Mode Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using LiNbO₃Ferroelectric Insulator on Gate-Recessed Structure

GaN-Based Enhancement-Mode Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using LiNbO₃Ferroelectric Insulator on Gate-Recessed Structure

Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications