Electron trapping effects in C- and Fe-doped GaN and AlGaN

Lopatiuk, O.; Osinsky, A.; Dabiran, A. M.; Gartsman, K.; Feldman, Isai; Chernyak, Leonid

doi:10.1016/j.sse.2005.08.002

Cited by 28 publications

(21 citation statements)

References 40 publications

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“…We note that due to the low energy of the electron beam used in this study, the generation of irradiation-induced defects and structural modification of the superlattice are highly unlikely. 5 EBIC measurements were performed in a linescan mode, where the induced current is measured as a function of distance of the SEM beam from the Schottky barrier ͑see Ref. 12 for the detailed description of EBIC method͒.…”

mentioning

confidence: 99%

Electron irradiation-induced increase of minority carrier diffusion length, mobility, and lifetime in Mg-doped AlN∕AlGaN short period superlattice

Lopatiuk-Tirpak

Chernyak

Borisov

et al. 2007

Applied Physics Letters

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Minority carrier diffusion length in a p-type Mg-doped AlN∕Al0.08Ga0.92N short period superlattice was shown to undergo a multifold and persistent (for at least 1week) increase under continuous irradiation by low-energy beam of a scanning electron microscope. Since neither the diffusion length itself nor the rate of its increase exhibited any measurable temperature dependence, it is concluded that this phenomenon is attributable to the increase in mobility of minority electrons in the two-dimensional electron gas, which in turn is limited by defect scattering. Cathodoluminescence spectroscopy revealed ∼40% growth of carrier lifetime under irradiation with an activation energy of 240meV.

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confidence: 99%

Electron irradiation-induced increase of minority carrier diffusion length, mobility, and lifetime in Mg-doped AlN∕AlGaN short period superlattice

Lopatiuk-Tirpak

Chernyak

Borisov

et al. 2007

Applied Physics Letters

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“…2), as its activation energy is typical for a deep iron acceptor reported elsewhere (e.g. cathodoluminescence provided a binding energy of Fe-hole complex E a E0.24 eV for GaN:Fe [4]). Temperature-dependent conductivity and Hall studies [13] showed in counterpart that good-quality freestanding GaN:Fe is very weakly ntype, and in such a case E a E0.6 eV.…”

Section: Article In Pressmentioning

confidence: 64%

“…However, the role of extended defects and doping-induced ones on electrical properties of semiinsulating (SI) templates needs further studies. Up to now, the photoluminescence [3] and cathodoluminescence [4] were the main techniques used to explore the deep defect states and their transformation under excitation.…”

Section: Introductionmentioning

confidence: 99%

Photoelectric properties of highly excited GaN:Fe epilayers, grown by modulation- and continuous-doping techniques

Bougrioua¹,

Adnane²,

Beaumont³

et al. 2007

Journal of Crystal Growth

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“…The results of [6,7] show that at the intentional introduction of carbon into GaN lattice it occupies nitrogen sites and forms an acceptor-type electron trapping centers. However, due to its amphoteric nature the carbon impurity at higher doping levels is believed to occupy not only nitrogen sites but also gallium sites [5,[8][9][10]. Thus, selfcompensation becomes quite plausible.…”

Section: Resultsmentioning

confidence: 99%

A new approach to grow C‐doped GaN thick epitaxial layers

Gogova

Rudko

Siche

et al. 2011

Phys. Status Solidi C

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In this study we employ a new method for growth of carbon‐doped wurtzite crystalline GaN (GaN:C) based on vapour phase transport of Ga by the pseudohalide hydrogen cyanide HCN. GaN:C layers with a thicknesses from 10 to 100 μm and up to 19 mm in size were grown from gallium melt and ammonia as feeding materials in a carbon‐containing equipment. The properties of the GaN:C layers were characterized by low‐temperature photoluminescence (LTPL), High‐Resolution X‐ray Diffraction (HRXRD), Secondary Ion Mass Spectrometry (SIMS) and room‐temperature Hall effect and Raman spectroscopy measurements. HRXRD studies demonstrated good crystalline quality of the thick GaN layers (the Rocking curve FWHMs are 570 arcsec for the (0004) reflection and 561 arcsec for the (10‐14) reflection for 10 μm thick samples). The LTPL and Raman spectroscopy confirmed the good optical and structural quality of the material. The carbon concentration measured by SIMS was 6x1018 cm‐3, however, the room‐temperature Hall effect experiments showed n‐type conductivity. Carbon acceptor incorporation into GaN (from the transport agent) as well as the reason of its electrical overcompensation by unintentional impurities like oxygen and silicon is discussed. Ways of technological process improvement are proposed. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Electron trapping effects in C- and Fe-doped GaN and AlGaN

Cited by 28 publications

References 40 publications

Electron irradiation-induced increase of minority carrier diffusion length, mobility, and lifetime in Mg-doped AlN∕AlGaN short period superlattice

Electron irradiation-induced increase of minority carrier diffusion length, mobility, and lifetime in Mg-doped AlN∕AlGaN short period superlattice

Photoelectric properties of highly excited GaN:Fe epilayers, grown by modulation- and continuous-doping techniques

A new approach to grow C‐doped GaN thick epitaxial layers

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