Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers

Bergsten, Johan; Thorsell, Mattias; Adolph, David; Chen, Jr-Tai; Kordina, Olof; Sveinbjörnsson, Einar Ö.; Rorsman, Niklas

doi:10.1109/ted.2018.2828410

Cited by 61 publications

(43 citation statements)

References 40 publications

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“…In offstate, electroluminescence images detect the presence of localized leakage paths which may correspond to dislocations and act as preferential paths for electron trapping. Degradation is therefore preliminary attributed to trapping effects, enhanced by electric field, as shown in [21], [22]. In semi-on state and on-state, the effects of selfheating and trapping effects are the main cause of degradation.…”

Section: Discussionmentioning

confidence: 99%

Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs

Gao

Meneghini

Harrouche

et al. 2020

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, LGD. While breakdown voltages and critical voltages scale almost linearly with LGD, failure mode remains almost unchanged in the nine device groups, and consists in an increase of gate leakage, accompanied by a positive shift of threshold voltage. In off-state, electroluminescence images detect the presence of localized leakage paths which may correspond to dislocations and act as preferential paths for electron trapping. Degradation is therefore preliminary attributed to hot-electron trapping, enhanced by electric fields.

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Section: Discussionmentioning

confidence: 99%

Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs

Gao

Meneghini

Harrouche

et al. 2020

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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“…Substitutional C (CN) at N-site with an energy level of 0.9 eV above the valence band maxima has been identified as one of the common sources of both DC and RF performance degradation in GaN HEMTs [16]. Therefore, an improvement in dynamic behavior and RF performance is expected due to the reduction in the acceptorlike CN in the vicinity of the heterointerface and the channel, as indicated by several reports [17]. Unfortunately, the background carbon cannot be removed completely, as the organometallic precursors are the source of this C impurity in MOCVD grown GaN.…”

Section: Effects Of Residual Carbon On Ftmentioning

confidence: 99%

AlInGaN/GaN HEMTs With High Johnson’s Figure-of-Merit on Low Resistivity Silicon Substrate

Sanyal

Lin

Wan

et al. 2021

IEEE J. Electron Devices Soc.

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“…Hence, the characterization of traps in the HEMT is essential for improving the epilayer crystalline quality. The drain current transient (DCT) spectroscopy [8][9][10][11][12][13][14][15][16][17][18] and low-frequency (LF) output-admittance (Y 22 ) parameters [15,16,[19][20][21][22][23][24][25][26][27] are the well-estimated techniques to characterize the deep-level defects present in the AlGaN/GaN HEMT structures.…”

Section: Introductionmentioning

confidence: 99%

Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties

et al. 2021

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The buffer and surface trapping effects on low-frequency (LF) Y-parameters of Fe-doped AlGaN/GaN high-electron mobility transistors (HEMTs) are analyzed through experimental and simulation studies. The drain current transient (DCT) characterization is also carried out to complement the trapping investigation. The Y22 and DCT measurements reveal the presence of an electron trap at 0.45–0.5 eV in the HEMT structure. On the other hand, two electron trap states at 0.2 eV and 0.45 eV are identified from the LF Y21 dispersion properties of the same device. The Y-parameter simulations are performed in Sentaurus TCAD in order to detect the spatial location of the traps. As an effective approach, physics-based TCAD models are calibrated by matching the simulated I-V with the measured DC data. The effect of surface donor energy level and trap density on the two-dimensional electron gas (2DEG) density is examined. The validated Y21 simulation results indicate the existence of both acceptor-like traps at EC –0.45 eV in the GaN buffer and surface donor states at EC –0.2 eV in the GaN/nitride interface. Thus, it is shown that LF Y21 characteristics could help in differentiating the defects present in the buffer and surface region, while the DCT and Y22 are mostly sensitive to the buffer traps.

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Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers

Cited by 61 publications

References 40 publications

Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs

Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs

AlInGaN/GaN HEMTs With High Johnson’s Figure-of-Merit on Low Resistivity Silicon Substrate

Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties

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