Electron trapping in oxide grown from polycrystalline silicon

Hu, Chenming; Joh, Dai-Geun; Shum, Ying; Klein, Tom

doi:10.1109/iedm.1979.189586

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1984

1990

Publication Types

Select...

Article2

Other1

Relationship

Self Cite0

Independent3

Authors

Journals

Cited by 3 publications

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Testing of E²PROM aging and endurance: A case study

Lanzoni

Menozzi

Olivo

et al. 1990

Trans Emerging Tel Tech

View full text Add to dashboard Cite

This work presents a detailed characterization of commercial E2PROMs performed by means of a new technique that allows non destructive monitoring of cell aging. Such a tech nique is based on accurate time control of the device power supply to stop the programming process, thus freezing the charge injected into the floating gate. Since a characteristic time is measured, the experiments can be performed varying other important parameters (in particular the supply voltage), whose influence on device endurance has been demonstrated. Thp method is also used to monitor the floating gate charging and discharging dynamics exploiting measurements of the drawn current.

show abstract

Testing of E²PROM aging and endurance: A case study

Lanzoni

Menozzi

Olivo

et al. 1990

Trans Emerging Tel Tech

View full text Add to dashboard Cite

show abstract

A model for conduction in floating-gate EEPROM's

Jolly

Grinolds

Groth³

1984

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

A testing technique to characterize E/sup 2/PROM's aging and endurance

Lanzoni

Olivo

Riccò

Proceedings. 'Meeting the Tests of Time'., International Test Conference

View full text Add to dashboard Cite

This work presents a testing method to monitor E'PROM cell aging. The technique is not based on any particular assumption about cell technology, hence it can be used to characterize wearout dynamics in all cases where charge trapped in tunnel oxide is the main failure mechanism. The method is validated by means of a wide set of measurementa performed with an automatic test equipment and a simple rule is proposed for first order estimates of device endurance.

show abstract

Electron trapping in oxide grown from polycrystalline silicon

Cited by 3 publications

References 0 publications

Testing of E²PROM aging and endurance: A case study

Testing of E²PROM aging and endurance: A case study

A model for conduction in floating-gate EEPROM's

A testing technique to characterize E/sup 2/PROM's aging and endurance

Contact Info

Product

Resources

About

Electron trapping in oxide grown from polycrystalline silicon

Cited by 3 publications

References 0 publications

Testing of E2PROM aging and endurance: A case study

Testing of E2PROM aging and endurance: A case study

A model for conduction in floating-gate EEPROM's

A testing technique to characterize E/sup 2/PROM's aging and endurance

Contact Info

Product

Resources

About

Testing of E²PROM aging and endurance: A case study

Testing of E²PROM aging and endurance: A case study