Electron traps and growth rate of buffer layers in unintentionally doped GaN

Cho, H.K.; Kim, K.S.; Hong, Chang–Hee; Lee, H.J.

doi:10.1016/s0022-0248(00)00982-9

Cited by 72 publications

(33 citation statements)

References 17 publications

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“…The appearance of dislocations in the LD heterostructure grown on the lattice-matched GaN substrate with a very low dislocation density may arise due to the growth of lattice-mismatched AlGaN and InGaN layers, which can give rise to dislocation generation during strain relaxation. Likely the same trap, called E1, was recently revealed in the DLT spectra measured in n-type GaN layers grown by metal-organic vapour-phase epitaxy (MOVPE) on sapphire [9,10] and in MOVPE-grown LD heterostructure [11], and attributed to the core states of threading dislocations.…”

Section: Discussionmentioning

confidence: 57%

Deep-Level Defects in MBE-Grown GaN-Based Laser Structure

et al. 2007

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We present results of deep-level transient spectroscopy investigations of defects in a GaN-based heterostructure of a blue-violet laser diode, grown by plasma-assisted molecular beam epitaxy on a bulk GaN substrate. Three majority-carrier traps, T1 at E C − 0.28 eV, T2 at E C − 0.60 eV, and T3 at EV + 0.33 eV, were revealed in deep-level transient spectra measured under reverse-bias conditions. On the other hand, deep-level transient spectroscopy measurements performed under injection conditions, revealed one minority--carrier trap, T4, with the activation energy of 0.20 eV. The three majority--carrier traps were revealed in the spectra measured under different reverse--bias conditions, suggesting that they are present in various parts of the laser--diode heterostructure. In addition, these traps represent different charge--carrier capture behaviours. The T1 trap, which exhibits logarithmic capture kinetics, is tentatively attributed to electron states of dislocations in the n-type wave-guiding layer of the structure. In contrast, the T2, T3, and T4 traps display exponential capture kinetics and are assigned to point defects.

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Section: Discussionmentioning

confidence: 57%

Deep-Level Defects in MBE-Grown GaN-Based Laser Structure

et al. 2007

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“…It shows that Fe doping increases the TDs density which is in opposite to literature [8].The presence of Fe in the lattice may act in the same way as changing the nucleation layer structure, which induces different types of defects in the layer thereby increasing the resistivity [9]. Screw dislocations are electrically conductive [10], mixed dislocations are electrically inactive or not highly conductive [11][12][13], and edge dislocations work as a acceptor-like trap levels [14] or are negatively charged and not highly conductive [13]. Correlating the number and type of defects with the electrical properties of the GaN epilayers can give insight in the origin of it.…”

Section: Resultsmentioning

confidence: 98%

Growth of Fe doped semi‐insulating GaN on sapphire and 4H‐SiC by MOCVD

Rudziński

Desmaris

Hal

et al. 2006

Phys. Status Solidi (c)

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We report a study of iron doped GaN layers grown on sapphire and SiC by Metal Organic Chemical Vapor Deposition (MOCVD) using ferrocene as the Fe precursor. The influence of iron doping on the electrical, structural and morphological properties of the GaN layers was studied. A resistivity of 6x10 3 Ωcm and higher was achieved in contrast to 3 Ωcm for the undoped film. Defect selective etching showed that Fe doping increases the threading dislocation (TD) density which might be responsible for the increase in resistivity. A turn-on, turn-off effect is described and a memory effect which is responsible for a decrease of the surface quality of the samples. In situ annealing of the susceptor and the use of a clean liner after each growth run helps to reduce this effect and maintain the good quality of GaN layers.

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“…Another reason for the higher forward voltage in sample D may be the increase of edge dislocation density as discussed above. The edge dislocations will introduce deep acceptor level into GaN forbidden energy band and then have an acceptor compensation effect [19]. In order to make a reliability analysis of LED devices, the reverse leakage current was measured.…”

Section: Resultsmentioning

confidence: 99%

Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface

Xiang-Jing

Zhang

et al. 2014

J Mater Sci: Mater Electron

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The following paper presents a study on the performance of InGaN/GaN-based light-emitting diodes (LEDs) with a nano-roughened p-GaN surface, which were grown by metal-organic chemical vapor deposition. This nano-roughened p-GaN surface was obtained by using nitrogen (N 2 ) as cyclopentadienyl magnesium (Cp 2 Mg) carrier gas during the growth of p-GaN layer. Research results show that the surface roughness of p-GaN layer is influenced by the injection flow of N 2 and the injection time of N 2 . Under the optimal process condition, the light output power of LED with a nano-roughened p-GaN surface is improved by 30.4 % compared with that of conventional LED with an injection current of 20 mA. Meanwhile, current-voltage curve shows that the electrical performance of this sample is similar to that of conventional LED. The improvement of light output power is mainly attributed to the higher light extraction efficiency when nano-roughened p-GaN surface is adopted.

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Electron traps and growth rate of buffer layers in unintentionally doped GaN

Cited by 72 publications

References 17 publications

Deep-Level Defects in MBE-Grown GaN-Based Laser Structure

Deep-Level Defects in MBE-Grown GaN-Based Laser Structure

Growth of Fe doped semi‐insulating GaN on sapphire and 4H‐SiC by MOCVD

Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface

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