2005
DOI: 10.1007/s10812-005-0057-x
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Electron Traps with a Wide Range of Capture Cross Sections in Powdery ZnS-Based Luminophors

Abstract: Using the method of thermally stimulated luminescence, the phenomenon of spatial modulation of the capture cross section (S t ) of electron traps with a level of E c − 0.18 eV in powdery luminophors Zn 0.97 Cd 0.03 S ICu, ClJ with green luminescence and ZnSIAg, ClJ with blue luminescence by a collective electric field of macroinhomogeneity has been investigated. The maximum value of the effect (width of the range of values of S t ) attains five orders of magnitude, with the size of the powder grains being of o… Show more

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Cited by 2 publications
(11 citation statements)
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“…In the latter, they have a discrete cross section S t = 2.1⋅10 ues for the same trapping centers, depending on the modification of the semiconductor, complicates attempts to interpret this phenomenon based on ideas assuming it is connected only with individual features of the corresponding electron center. An electron trapping center with a discrete level E C -0.18 eV and an expanded spectrum of S t values was studied by TSL earlier in [12] in powdered luminophores based on zinc sulfide. According to the proposed model, electron trapping centers with an expanded spectrum of S t values are donor-type centers, localized in the region of the collective field of a macroscopic inhomogeneity: the negatively charged surface of the powder grains.…”
Section: Thermoluminescent Properties Of Zinc Oxide Single Crystals Amentioning
confidence: 99%
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“…In the latter, they have a discrete cross section S t = 2.1⋅10 ues for the same trapping centers, depending on the modification of the semiconductor, complicates attempts to interpret this phenomenon based on ideas assuming it is connected only with individual features of the corresponding electron center. An electron trapping center with a discrete level E C -0.18 eV and an expanded spectrum of S t values was studied by TSL earlier in [12] in powdered luminophores based on zinc sulfide. According to the proposed model, electron trapping centers with an expanded spectrum of S t values are donor-type centers, localized in the region of the collective field of a macroscopic inhomogeneity: the negatively charged surface of the powder grains.…”
Section: Thermoluminescent Properties Of Zinc Oxide Single Crystals Amentioning
confidence: 99%
“…However, it considered participation in the thermally stimulated generationrecombination process of only one trapping center with a discrete level and a radiative recombination center (RRC) which does not undergo thermal ionization over the course of the entire process. As shown by experience [2][3][4][5][6][7][8][9][10][11][12][13][14], in real semiconductors and dielectrics, electron and hole trapping centers are realized with a quasidiscrete system of energy levels, and consequently the TSC and TSL spectra ** do not consist of one elementary band but rather a series of…”
mentioning
confidence: 99%
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