Electron tunneling in tantalum surface layers on niobium

Ruggiero, S. T.; Track, E.K.; Prober, D. E.; Arnold, G.; DeWeert, M. J.

doi:10.1103/physrevb.34.217

Cited by 15 publications

(1 citation statement)

References 33 publications

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“…͑The parallel resistance, discussed above, was not incorporated into these calculations and its presence does not substantially change these results.͒ The data are consistent with the idea of a systematic depression of the intrinsic barrier height of pure Al 2 O 3 as we have previously discussed in connection with Bi particles on Al 2 O 3 31 and has been noted in connection with other artificial barrier systems. 7 In general, thicker C 60 layers produced barriers with progressively lower effective heights and larger widths.…”

Section: A Al 2 O 3 /C 60 Systemsmentioning

confidence: 97%

Tunneling in multilayer fullerene/Al2O3and fullerene/Ge systems

Nolen

Ruggiero

1998

Phys. Rev. B

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We discuss results on tunneling in barriers consisting of both pure fullerene films and layered composites of fullerenes and dielectric materials. This work focuses on C 60 films, which ranged from 50 to 600 Å in thickness and were layered with both Al 2 O 3 and Ge films 10 to 40 Å in thickness. These studies reveal that for the deposition conditions used here, incomplete C 60 coverage occurred for film thicknesses less than ϳ400 Å. For composites of C 60 with Al 2 O 3 or Ge, we observed isolated clusters of C 60 molecules and Coulomb blockade behavior consistent with the size scale of the clusters. Interesting dynamical effects were also observed in conductance characteristics that were both dramatic and in some cases entirely reproducible.

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Section: A Al 2 O 3 /C 60 Systemsmentioning

confidence: 97%