Electron-wave interaction in submicrometer gate field-effect transistors

Alsunaidi, M.A.; El-Ghazaly, S.M.

doi:10.1109/mwsym.1995.406199

Cited by 3 publications

(3 citation statements)

References 7 publications

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“…Similar expressions are obtained for the other momentum components (i.e., -andcomponents). The current density distribution inside the device is given by (5) This model accurately describes all nonstationary transport effects by allowing energy dependence of all transport parameters such as effective mass and relaxation times. The inertia effects, which are usually neglected in most existing models, are also included by allowing the electron momentum to be time and space dependent.…”

Section: A DC Semiconductor Modelmentioning

confidence: 99%

“…The set of conservation equations are discretized using first-and second-order upwind schemes in order to preserve the transportive and conservative properties of the differential equations. More details of the discretization method of each term in the conservation equations can be found in [5]. The solution is carried on a 2-D mesh with nonuniform spacing along the -direction and uniform spacing along the -direction.…”

Section: ) Solution Of Hydrodynamic Equationsmentioning

confidence: 99%

“…These aforementioned facts clearly indicate that wave-particle interactions and their effect on the device operation can no longer be ignored and that new models capable of simulating these interactions should be considered. An effort has already been extended toward that end by Al-Sunaidi et al [5], [6]. In [6], Al-Sunaidi presented a full-wave physical model for high-frequency transistors that integrates the semiconductor transport equations with direct solution of Maxwell's equations.…”

Section: Introductionmentioning

confidence: 99%

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Air-bridged gate MESFET: a new structure to reduce wave propagation effects in high-frequency transistors

Hammadi

El-Ghazaly

1999

IEEE Trans. Microwave Theory Techn.

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In conventional microwave transistors, the gain and output power are significantly reduced by gate ohmic resistance and phase cancellation. The air-bridged gate (ABG) transistors overcomes both problems by providing larger gate cross section along the propagation direction of the signal, and keeping both the input and output signals in phase along the device width. The performance of the air-bridged and conventional transistor is evaluated from both dc and radio-frequency (RF) points-of-view. A full hydrodynamic transport model, which accurately describes the electron dynamics in short channel devices, is used in the dc analysis. For RF analysis, a full-wave model, capable of capturing all important high-frequency effects, such as wave-particle interactions and traveling-wave effects, is implemented. This model is based on the coupling of the hydrodynamic transport equations with Maxwell's equations. Results related to the traveling-wave effects in conventional and ABG devices, such as phase mismatch and gain reduction at high frequencies, are illustrated. From these results, we show that the ABG metal-semiconductor fieldeffect transistor (MESFET) has superior performance at very high frequency as compared to conventional planar MESFET's.

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Section: A DC Semiconductor Modelmentioning

confidence: 99%

Section: ) Solution Of Hydrodynamic Equationsmentioning

confidence: 99%