Electronic and geometric structure of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">C</mml:mi></mml:mrow><mml:mrow><mml:mn>60</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>on Al(111) and Al(110)

Maxwell, Andrew J.; Brühwiler, Paul A.; Arvanitis, D.; Hasselstrøm, Jørgen B.; Johansson, Mikael; Mårtensson, Nils

doi:10.1103/physrevb.57.7312

Cited by 180 publications

(202 citation statements)

References 70 publications

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“…The authors explain their observations by the supposed metallic nature of the C 60 overlayer, making the workfunction of the C 60 overlayer independent of the metal substrate. Although this does not explain the observed differences in workfunction of the C 60 overlayer of 4.7 eV for C 60 on Au (111) [18], 5.25 eV for C 60 monolayer on Al (110) [15] and 5.4 eV for a C 60 overlayer on Ta [19].…”

Section: Introductionmentioning

confidence: 74%

“…3a, imply an electric field pointing from C 60 (δ+) towards the Au substrate (δ−). This seems to contradict the partial filling of the LUMO of the C 60 monolayer by electron transfer from the Au substrate to the organic layer, as was already reported for C 60 monolayers on several crystalline metal substrates [13,[15][16][17]. These authors argue that the C 60 overlayer acts as a metal and that the image plane moves from the interface to the outside of the C 60 overlayer.…”

Section: On Aumentioning

confidence: 85%

“…1. Many metal/C 60 interfaces have been studied and substantial workfunction changes have been observed (see for example [13][14][15][16][17]). At these interfaces electron transfer from the metal substrate to the C 60 monolayer was observed but the charge transfer could not explain the observed workfunction change of the C 60 overlayer.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

On interface dipole layers between C 60 and Ag or Au

Veenstra

Heeres

Hadziioannou

et al. 2002

Applied Physics A: Materials Science & Processing

105

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C 60 layers on polycrystalline Ag and Au are studied by photoelectron spectroscopy. At these metal/C 60 interfaces an electron transfer occurs from the metal to the lowest unoccupied orbital of C 60 . We found in the case of the polycrystalline Ag/C 60 interface a dipolar layer with its associated electric field in the direction corresponding to the charge transfer, so pointing from the substrate to the adsorbent. Yet, at the Au/C 60 interface we observed an overall electric field pointing from C 60 towards the metal. We discuss our observations in terms of charge transfer, screening and hybridization effects and propose the occurrence of a hybridization mechanism similar to back-bonding at the Au/C 60 interface. We show that the alignment of energy levels at the metal/C 60 interface cannot simply be deduced using the metal workfunction and the frontier orbitals of C 60 , including screening effects, since hybridization effects may strongly alter the interfacial energy level structure. Our experimental findings on the polycrystalline metal/C 60 interfaces indicate an at-most weak dependence of the Fermi level of the C 60 overlayer on the workfunction of the polycrystalline metal substrate. These interfaces are found in donoracceptor-based organic photovoltaic devices and our results may help to understand the electrical characteristics of these devices.

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Section: Introductionmentioning

confidence: 74%

Section: On Aumentioning

confidence: 85%

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On interface dipole layers between C 60 and Ag or Au

Veenstra

Heeres

Hadziioannou

et al. 2002

Applied Physics A: Materials Science & Processing

105

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“…The saturation of the charge-induced shifts in binding energies arises from an equilibrium charging within the film which has also been observed in molecular systems such as C 60 , for example. 24,25 The relatively small change in the width of peak A ͓Fig. 4͑c͔͒ indicates that this surface charging is relatively homogeneous.…”

Section: Fig 5 ͑A͒mentioning

confidence: 99%

Reactions and luminescence in passivated Si nanocrystallites induced by vacuum ultraviolet and soft-x-ray photons

Chao

Krishnamurthy

Montalti

et al. 2005

Journal of Applied Physics

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Alkyl-modified silicon nanocrystallites are efficient fluorophores which are of interest for fundamental spectroscopic studies and as luminescent probes in biology because of their stability in aqueous media. In this work we have investigated these particles using scanning tunneling microscopy, synchrotron-radiation excited photoemission, and x-ray excited optical luminescence (XEOL). During the course of illumination with 145-eV photons we have monitored the evolution of the Si2p core level and, in samples which have suffered prolonged atmospheric exposure, observed in real time the growth of an extra Si2p component attributed to in situ photoinduced oxidation of the Si nanocrystallites. XEOL reveals that two emission bands are active upon soft-x-ray photon excitation and that photoluminescence intensity decreases with photon exposure, which is attributed to charge trapping within the film. (c) 2005 American Institute of Physics

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“…As a proof of principle, we focus on the interfaces between C 60 and different metals. Several reports show that significant charge transfer takes place at such interfaces, resulting in strong interfacial dipoles and band bending [7][8][9][10][11][12][13] . Here we directly measure the metal/C 60 energy barriers for carrier injection in a vertical device geometry, and study how these barriers determine the in-device electrical resistance.…”

mentioning

confidence: 99%

Determination of energy level alignment at metal/molecule interfaces by in-device electrical spectroscopy

et al. 2014

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The energetics of metal/molecular semiconductor interfaces plays a fundamental role in organic electronics, determining the performance of very diverse devices. So far, information about the energy level alignment has been most commonly gained by spectroscopy techniques that typically require experimental conditions far from the real device operation. Here we demonstrate that a simple three-terminal device allows the acquisition of spectroscopic information about the metal/molecule energy alignment in real operative condition. As a proof of principle, we employ the proposed device to measure the energy barrier height between different clean metals and C 60 molecules and we recover typical results from photoemission spectroscopy. The device is designed to inject a hot electron current directly into the molecular level devoted to charge transport, disentangling the contributions of both the interface and the bulk to the device total resistance, with important implications for spintronics and low-temperature physics.

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Electronic and geometric structure ofC60on Al(111) and Al(110)

Cited by 180 publications

References 70 publications

On interface dipole layers between C 60 and Ag or Au

On interface dipole layers between C 60 and Ag or Au

Reactions and luminescence in passivated Si nanocrystallites induced by vacuum ultraviolet and soft-x-ray photons

Determination of energy level alignment at metal/molecule interfaces by in-device electrical spectroscopy

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