We demonstrated a reversible two-dimensional (2D) to
three-dimensional
(3D) crystal-structure transition and associated thermal conductivity
switching (κ) well above room temperature (RT) in (Sn1–x
Pb
x
)S bulk polycrystals,
solid solutions of 2D-layered SnS and 3D-cubic PbS. The direct phase
boundary between the 2D and 3D structures does not exist in (Sn1–x
Pb
x
)S
under the thermal equilibrium condition due to the solubility limit x = 0.5 in the 2D phase and x = 0.9 in
the 3D phase. While, by applying a non-equilibrium synthesis process
that combined a high-temperature solid-state reaction at 973 K and
subsequent rapid thermal quenching to RT, the Sn solubility limit
in the 3D (Sn1–x
Pb
x
)S was not changed but the Pb solubility limit was
considerably expanded up to x = 0.9 in 2D (Sn1–x
Pb
x
)S.
As a result, the direct 2D–3D phase boundary was formed in
the Pb-rich (Sn0.2Pb0.8)S, which showed the
reversible 2D–3D (3D–2D) structural phase transition
at ∼573 K (473 K). This transition temperature is much higher
than that previously reported for (Sn0.5Pb0.5)Se, which requires temperatures lower than RT for the reversible
structure transition. The electronic band structure change from a
2D semiconducting state to a 3D metallic state caused a 20-times increase
in electron κ (κele) during the structural
phase transition in the (Sn0.2Pb0.8)S. Still,
κele negligibly contributes to the total κ.
In contrast, the lattice κ (κlat) was largely
decreased by the 3D–2D structure transition due to the formation
of a 2D-layered structure with strong phonon scattering, resulting
in a 1.8-times modulation of the total κ (κ3D phase/κ2D phase) at 463 K. The realization of
2D–3D structural phase transition above RT in (Sn1–x
Pb
x
)S would accelerate
the development of thermal management materials through a crystal-structure
dimensionality switch using non-equilibrium phase boundaries.