Electronic and magnetic behavior of transition metal-doped cubic gallium nitride: first-principles calculations

R, Miguel J. Espitia; Parra, Octavio Salcedo; López, César Ortega

doi:10.1016/j.jmmm.2017.11.070

Cited by 11 publications

(1 citation statement)

References 47 publications

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“…In recent years, the diluted magnetic semiconductors (DMS) have attracted significant interest because they are a one class of half-metallic ferromagnets (HMFs) owing to their electronic structures that exhibit semiconducting character in onespin channel and metallic nature in the other direction, which make them promising materials for spin injection in spintronics [1][2][3][4][5][6][7] The HMFs can be extensively used in spintronics devices as spin injection, spin filters, spin valves, tunnel junctions and magneto-resistive randomaccess memory [8] Spintronics devices have many advantages over conventional semiconductor devices such…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Substituting Effect of Chromium on the Electronic Structures and the Half-Metallic Ferromagnetic Properties of BaO

Lakhdari

Doumi

Mokaddem

et al. 2018

J Supercond Nov Magn

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as non-volatility, increased transistor density, lower electric power consumption and higher dataprocessing speed [9][10][11].The DMS based on transition metal-doped II-VI semiconductors are promising candidates for spintronics applications because of their half-metallic ferromagnetic performance [12][13][14] and they show the stability of ferromagnetic state at temperatures higher than room temperature [1]. The II-VI alkaline-earth-metal oxides form a significant class of materials because they constitute a link between the highly ionic halides and the widely covalent semiconductors [15][16][17]. These compounds have attracted much attention due to their potential technological

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Section: Introductionmentioning

confidence: 99%

Investigation of the Substituting Effect of Chromium on the Electronic Structures and the Half-Metallic Ferromagnetic Properties of BaO

Lakhdari

Doumi

Mokaddem

et al. 2018

J Supercond Nov Magn

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Influence of N‐vacancy on the electronic and optical properties of bulk GaN from first‐principles investigations

Pan¹

2021

Intl J of Energy Research

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Gallium nitride (GaN) is a promising semiconductor material for the application of the high power electronic, optoelectronic, laser diodes, etc. The previous works have been focused on the electronic and optical properties of the monolayer GaN. However, the structural, electronic and optical properties of the bulk GaN are unclear. In particular, the role of N-vacancy on the electronic and optical properties of the bulk GaN is unknown. In this work, we apply first-principles calculations to study the influence of N-vacancy on the structural, electronic and optical properties of the bulk GaN. Three bulk GaN: hexagonal (P63/mc), cubic (F-43m) and cubic (Fm-3m) are considered. The result shows that the N-vacancy is thermodynamic stability in bulk GaN. The thermodynamic stability of the GaN with the N-vacancy is demonstrated by the change of Ga N bond. Three GaN show the semiconductor feature because of the role of N-2p state. The calculated band gap of GaN with the P63mc, F-43m and Fm-3m is 1.651, 1.489 and 0.450 eV. However, the N-vacancy enhances the electronic jump of GaN because the N-vacancy induces the move of the position of Fermi level to the region of the conduction band. The metallic behavior of GaN with the N-vacancy is demonstrated by the dielectric function diagram. In particular, the N-vacancy gives rise to the visible light region optical adsorption compared to the corresponding bulk GaN.

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A first-principles study of electronic and magnetic properties of 4d transition metals doped in Wurtzite GaN for spintronics applications

Shilkar,

Adhikari,

Sappati

et al. 2023

J Mol Model

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Electronic and magnetic behavior of transition metal-doped cubic gallium nitride: first-principles calculations

Cited by 11 publications

References 47 publications

Investigation of the Substituting Effect of Chromium on the Electronic Structures and the Half-Metallic Ferromagnetic Properties of BaO

Investigation of the Substituting Effect of Chromium on the Electronic Structures and the Half-Metallic Ferromagnetic Properties of BaO

Influence of N‐vacancy on the electronic and optical properties of bulk GaN from first‐principles investigations

A first-principles study of electronic and magnetic properties of 4d transition metals doped in Wurtzite GaN for spintronics applications

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