Electronic and magnetic properties of pristine and chemically functionalized germanene nanoribbons

Pang, Qi; Zhang, Yan; Zhang, Jianmin; Ji, Vincent; Xu, Ke

doi:10.1039/c1nr10594a

Cited by 100 publications

(73 citation statements)

References 58 publications

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“…8 Germanene has the same honeycomb structure as graphene, but the atoms are buckled, resulting in increased stability and improved carrier transport characteristics in comparison to graphene. Moreover, the electronic structure of germanene is quite similar to graphene.…”

Section: -5mentioning

confidence: 99%

Edge functionalized germanene nanoribbons: impact on electronic and magnetic properties

2017

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Germanene exhibits extremely high mobility, massless fermion behavior, and strong spin-orbit coupling drawing tremendous interest for high performance devices. It has a buckled two-dimensional structure, but not the intrinsic energy band gap and structural stability required for logic and switching devices.Application of a perpendicular electric field, surface adsorption, confinement of an armchair nanoribbon structure and edge functionalization are methods used to open a band gap. Edge functionalization of armchair germanene nanoribbons (AGeNRs) has the potential to achieve a range of band gaps. The edge atoms of AGeNRs are passivated with hydrogen (-H and -2H) or halogen (-F, -Cl, -OH, -2F, -2Cl) atoms. Using density functional theory calculations, we found that edge functionalized AGeNRs had band gaps as small as 0.012 eV when functionalized by -2H and as high as 0.84 eV with -2F. Formation energy studies revealed that AGeNRs produced a more stable structure under fluorine functionalization.Simulation results suggest that the electronic structure of germanene is similar to graphene and silicene.A spin-polarized density functional theory (DFT) study of electronic and magnetic properties of pristine, chemically functionalized and doped AGeNRs and zigzag nanoribbons (ZGeNRs) was performed.Formation energy studies revealed that the Ge atoms at the edge of the ribbon prefer to be replaced by impurity atoms. Doping can change the semiconducting behaviour of AGeNRs to metal behaviour due to the half-filled band making it useful for negative differential resistance (NDR) devices. In the case of

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Section: -5mentioning

confidence: 99%

Edge functionalized germanene nanoribbons: impact on electronic and magnetic properties

2017

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“…The electronic properties of the edge states of silicene, germanene and stanene nanoribbons (SiNRs, GeNRs, SnNRs) with and without hydrogen termination have also been studied using a single-orbital tight-binding model [4,7] and first-principles calculations [37][38][39][40][41] by many groups. Although the single-orbital model can reproduce the bulk energy dispersion [42], it has not yet been clarified whether the single-orbital model can really express the various types of edge states with hydrogen termination [4].…”

Section: Introductionmentioning

confidence: 99%

Edge states of hydrogen terminated monolayer materials: silicene, germanene and stanene ribbons

Hattori¹,

Tanaya²,

Yada³

et al. 2017

J. Phys.: Condens. Matter

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Abstract.We investigate the energy dispersion of the edge states in zigzag silicene, germanene and stanene nanoribbons with and without hydrogen termination based on a multiorbital tight-binding model. Since the low buckled structures are crucial for these materials, both the π and σ orbitals have a strong influence on the edge states, different from the case for graphene nanoribbons. The obtained dispersion of helical edge states is nonlinear, similar to that obtained by first-principles calculations. On the other hand, the dispersion derived from the single-orbital tight-binding model is always linear. Therefore, we find that the non-linearity comes from the multi-orbital effects, and accurate results cannot be obtained by the single-orbital model but can be obtained by the multi-orbital tight-binding model. We show that the multi-orbital model is essential for correctly understanding the dispersion of the edge states in tetragen nanoribbons with a low buckled geometry.

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“…Pang et al investigated the electronic and magnetic properties of both pristine and chemically doped GeNRs and found that a single B or N substitution can induce a transition from semiconducting to metal in armchair GeNRs. 116 In addition, a single B or N doping turns AFM-semiconducting zigzag GeNRs into FM-semiconductor. Bayani et al studied the optical properties of hydrogenated GeNRs and the properties of H sensitive FET based on GeNRs.…”

Section: B Nrs Of Germanene and Stanenementioning

confidence: 99%

Nanoribbons: From fundamentals to state-of-the-art applications

Yagmurcukardes

Peeters

Senger

et al. 2016

Applied Physics Reviews

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Atomically thin nanoribbons (NRs) have been at the forefront of materials science and nanoelectronics in recent years. State-of-the-art research on nanoscale materials has revealed that electronic, magnetic, phononic, and optical properties may differ dramatically when their one-dimensional forms are synthesized. The present article aims to review the recent advances in synthesis techniques and theoretical studies on NRs. The structure of the review is organized as follows: After a brief introduction to low dimensional materials, we review different experimental techniques for the synthesis of graphene nanoribbons (GNRs) with their advantages and disadvantages. In addition, theoretical investigations on width and edge-shape-dependent electronic and magnetic properties, functionalization effects, and quantum transport properties of GNRs are reviewed. We then devote time to the NRs of the transition metal dichalcogenides (TMDs) family. First, various synthesis techniques, E-field-tunable electronic and magnetic properties, and edge-dependent thermoelectric performance of NRs of MoS 2 and WS 2 are discussed. Then, strongly anisotropic properties, growth-dependent morphology, and the weakly width-dependent bandgap of ReS 2 NRs are summarized. Next we discuss TMDs having a T-phase morphology such as TiSe 2 and stable single layer NRs of mono-chalcogenides. Strong edge-type dependence on characteristics of GaS NRs, width-dependent Seebeck coefficient of SnSe NRs, and experimental analysis on the stability of ZnSe NRs are reviewed. We then focus on the most recently emerging NRs belonging to the class of transition metal trichalcogenides which provide ultra-high electron mobility and highly anisotropic quasi-1D properties. In addition, width-, edge-shape-, and functionalization-dependent electronic and mechanical properties of blackphosphorus, a monoatomic anisotropic material, and studies on NRs of group IV elements (silicene, germanene, and stanene) are reviewed. Observation of substrate-independent quantum well states, edge and width dependent properties, the topological phase of silicene NRs are reviewed. In addition, H 2 concentration-dependent transport properties and anisotropic dielectric function of GeNRs and electric field and strain sensitive I-V characteristics of SnNRs are reviewed. We review both experimental and theoretical studies on the NRs of group III-V compounds. While defect and N-termination dependent conductance are highlighted for boron nitride NRs, aluminum nitride NRs are of importance due to their dangling bond, electric field, and strain dependent electronic and magnetic properties. Finally, superlattice structure of NRs of GaN/AlN, Si/Ge, G/BN, and MoS 2 /WS 2 is reviewed. Published by AIP Publishing.

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Electronic and magnetic properties of pristine and chemically functionalized germanene nanoribbons

Cited by 100 publications

References 58 publications

Edge functionalized germanene nanoribbons: impact on electronic and magnetic properties

Edge functionalized germanene nanoribbons: impact on electronic and magnetic properties

Edge states of hydrogen terminated monolayer materials: silicene, germanene and stanene ribbons

Nanoribbons: From fundamentals to state-of-the-art applications

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