2017
DOI: 10.1103/physrevb.95.245121
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Electronic and magnetic properties of epitaxial SrRhO3 films

Abstract: Strong interplay of fundamental order parameters in complex oxides are known to give rise to exotic physical phenomena. The 4d transition metal oxide SrRhO 3 has generated much interest, but advances have been hindered by difficulties in preparing single crystalline phases. Here, we have epitaxially stabilized high quality single crystalline SrRhO 3 films and investigated their structural, electronic, and magnetic properties. We determine that their properties significantly differ from the paramagnetic metalli… Show more

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Cited by 6 publications
(11 citation statements)
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“…To compute the magnetic susceptibility by DFT+DMFT, we applied a magnetic field of 5 meV (around 86 T) and allowed symmetry breaking of spin up and down. For crystal structure optimization of the SrRhO 3 thin film, we assumed the in-plane symmetry and lattice constants of the SrTiO 3 substrate and relaxed the internal positions of atoms in the unit cell by using DFT [16]. Fig.1 shows the core level HAXPES and SXPES results of the SrRhO 3 thin film.…”
Section: Methodsmentioning
confidence: 99%
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“…To compute the magnetic susceptibility by DFT+DMFT, we applied a magnetic field of 5 meV (around 86 T) and allowed symmetry breaking of spin up and down. For crystal structure optimization of the SrRhO 3 thin film, we assumed the in-plane symmetry and lattice constants of the SrTiO 3 substrate and relaxed the internal positions of atoms in the unit cell by using DFT [16]. Fig.1 shows the core level HAXPES and SXPES results of the SrRhO 3 thin film.…”
Section: Methodsmentioning
confidence: 99%
“…In Ref. [16], the possibility of magnetic ordering in the SrRhO 3 thin film with a transition temperature of around 100 K was proposed. To investigate the temperature dependence of the electronic structure in the SrRhO 3 thin film, we also conducted HAXPES measurement at 80 K. However, nearly no temperature dependence was observed, as shown in Fig.2(b).…”
Section: O 2pmentioning
confidence: 99%
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