Electronic and magnetic structure of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>Ga</mml:mtext></mml:mrow><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mrow><mml:mtext>Fe</mml:mtext></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>thin films

Arenholz, Elke; Laan, G. van der; McClure, Adam; Idzerda, Y. U.

doi:10.1103/physrevb.82.180405

Cited by 27 publications

(25 citation statements)

References 24 publications

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“…Finally, our samples are sputtered films that are as-grown and annealed at low temperatures, and so they might have a different microstructure than the bulk crystalline high-temperature annealed samples studied in previous works. [2][3][4][5][6][7]18,19 Taking into account all of these aspects, we can indicate that our experimental results point to a cubic structure in the Fe 3 Ga layers, being not observed evidences of the D0 3 phase.…”

Section: Resultsmentioning

confidence: 75%

“…Advanced characterization techniques have been used to analyze the strong correlation between the microstructure and the magnetoelastic properties in this material system. [2][3][4][5][6][7] These studies have proved that it is essential to precisely control the structural ordering in order to achieve a magnetostriction constant (k) of around 400 ppm in crystalline and 280 ppm in polycrystalline bulk Galfenol samples. 8,9 These high magnetostriction constants are achieved in quenched samples with Ga contents of 19% and 28%.…”

Section: Introductionmentioning

confidence: 99%

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Investigation on the structural and magnetic properties of sputtered TbFe2/Fe3Ga heterostructures

Ranchal

González-Martín

2011

Journal of Applied Physics

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We have analyzed the structural and magnetic properties of as-grown and annealed [TbFe 2 /Fe 3 Ga] n heterostructures grown by sputtering. Evidence of the bcc structure in the Fe 3 Ga layers has been found. The diffraction peak related to this structure shifts to high angles with the annealing temperature. Also, we have observed a change in the microstructure of the Tb-Fe layers when the thickness layer is reduced in the as-grown heterostructures. Moreover, the Tb content is lower than 33% of the TbFe 2 Laves phase and it depends on the layer thickness. The thermal treatments promote the increase of the Tb content, but only in the heterostructures with thick layers. The strong lattice mismatch between the Tb-Fe and Fe-Ga layers seems to prevent a complete Tb diffusion upon the annealing process. Thus, the crystallization of the TbFe 2 Laves phase is inhibited in the heterostructures with thin layers, although our experimental results indicate the presence of potential magnetostrictive TbFeGa alloys.

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Section: Resultsmentioning

confidence: 75%

Section: Introductionmentioning

confidence: 99%

Investigation on the structural and magnetic properties of sputtered TbFe2/Fe3Ga heterostructures

Ranchal

González-Martín

2011

Journal of Applied Physics

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“…The absence of both a diffraction peak at 2θ ∼30.7°related to the (100) reflection and a peak splitting around the (220) reflection at 2θ ∼97°rules out the presence of D0 3 clusters with a size equal to or greater than 100 nm [9]. Although bulk samples with a similar Ga content are mainly formed by the ordered D0 3 phase, previous papers on Fe-Ga thin films report that the disordered A2 phase is kept for a Ga content of 30 at.% [6]. From the angular position of the (110) peak and considering the bcc structure of the samples [ Fig.…”

Section: Resultsmentioning

confidence: 95%

“…Thus, the features of this sample can be a combination of the existence of both a more prominent presence of a disordered A2 phase with respect to the ordered D0 3 /B2 phases and of orthorhombic Ga clusters. A number of papers studied Fe-Ga thin films [6,[11][12][13][14][15][16][17][32][33][34] and, more specifically, deposition by sputtering [11][12][13][14][15][16][17], although few papers explore thin films with the composition range studied in this paper [6,11,35]. The paper by Dunlap et al [11], in which they studied sputtered Fe-Ga alloys with a (110) texture, is the most similar to the current case.…”

Section: Resultsmentioning

confidence: 99%

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Influence of the sputtering flow regime on the structural properties and magnetic behavior of Fe-Ga thin films (Ga ∼ 30 at.%)

2016

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In this paper we analyze the structure of Fe-Ga layers with a Ga content of ∼30 at.% deposited by the sputtering technique under two different regimes. We also studied the correlation between the structure and magnetic behavior of the samples. Keeping the Ar pressure fixed, we modified the flow regime from ballistic to diffusive by increasing the distance between the target and the substrate. X-ray diffraction measurements have shown a lower structural quality when growing in the diffusive flow. We investigated the impact of the growth regime by means of x-ray absorption fine structure (XAFS) measurements and obtained signs of its influence on the local atomic order. Full multiple scattering and finite difference calculations based on XAFS measurements point to a more relevant presence of a disordered A2 phase and of orthorhombic Ga clusters on the Fe-Ga alloy deposited under a diffusive regime; however, in the ballistic sample, a higher presence of D0 3 /B2 phases is evidenced. Structural characteristics, from local to long range, seem to determine the magnetic behavior of the layers. Whereas a clear in-plane magnetic anisotropy is observed in the film deposited under ballistic flow, the diffusive sample is magnetically isotropic. Therefore, our experimental results provide evidence of a correlation between flow regime and structural properties and its impact on the magnetic behavior of a rather unexplored compositional region of Fe-Ga compounds.

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Nanoscale Activation Energy Mapping and Leveraging for Accelerating Ferroelectric Domain Nucleation and Growth

Nath

Polomoff

Song

et al. 2022

Adv Elect Materials

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The dynamics of ferroelectric domain switching are directly mapped in a PbZr0.2Ti0.8O3 thin film using piezoresponse force microscopy. Employing the rastering tip as a poling electrode to locally apply a fixed bias near the coercive field, while simultaneously monitoring the evolving domain pattern during continuous imaging, the effectively independent switching dynamics for numerous domains are directly investigated. While areal poling follows the anticipated S‐curve, this is shown to be the collective outcome of linear terminal radial growth for an ensemble of independently nucleating domains. By repeating such spatially resolved measurements in the same region, but with progressively greater fields, nucleation sites and growth patterns are shown to clearly repeat. This reveals apparent defects which comparatively promote switching, and nucleation times and growth rates that accelerate exponentially. After analyzing and mapping the ratio of activation energies for nucleation to growth, a high density of nucleation sites can possibly be activated with higher poling fields—even if only at the start of a poling process—enabling faster and more efficient switching to be engineered as directly demonstrated.

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Electronic and magnetic structure ofGaxFe1−xthin films

Cited by 27 publications

References 24 publications

Investigation on the structural and magnetic properties of sputtered TbFe2/Fe3Ga heterostructures

Investigation on the structural and magnetic properties of sputtered TbFe2/Fe3Ga heterostructures

Influence of the sputtering flow regime on the structural properties and magnetic behavior of Fe-Ga thin films (Ga ∼ 30 at.%)

Nanoscale Activation Energy Mapping and Leveraging for Accelerating Ferroelectric Domain Nucleation and Growth

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