Electronic and mechanical properties of monocrystalline silicon doped with trace content of N or P: A first-principles study

Zhang, W.J.; Chen, Jieshi; Li, S.; Wu, Yuanhang; Zhang, P.L.; Yu, Zhi Shui; Yue, Zhihui; Yu, Chun; Lü, Hao

doi:10.1016/j.solidstatesciences.2021.106723

Cited by 22 publications

(4 citation statements)

References 19 publications

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“…Various researchers reported that the Cu 3 Sn layer and voids are suppressed with the reinforcement of trace elements in the solder composites. [ 14,112–115 ] Some literature also reported that metals (Cr, Mn, Zn, and Fe) [ 24,70,114,116 ] and additive elements (Ge, Ag, and Pd) [ 13,117,118 ] also helped in the reduction of the KVs. J. Y. Kim et al [ 20 ] explained that KVs are reduced due to decreasing interfacial segregation and reinforcement materials (sulfide‐forming elements such as Cr, Mn, and Zn) are represented as S scavengers.…”

Section: Explanation For Suppression Of Void Nucleationmentioning

confidence: 99%

Nucleation and Location of Kirkendall Voids at the Tin‐Based Solder/Copper Joint: A Review

Pal

Bajaj²

2023

Adv Eng Mater

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Void nucleation is a critical issue in wetting because it negatively impacts the solder joint and diminishes its electrical and mechanical properties. Generally, the Kirkendall effect (unbalanced diffusion) and Kirkendall voids (KVs) are developed due to dissimilar diffusivities of species (Cu and Sn) in a diffusion process. However, voids are also nucleated in the supersaturating condition, creating an additional position at or inside the “Kirkendall voids” interface. Various factors (surface modification, reinforcement of fourth elements, substrate type, and impurities) and the environment also support the nucleation of voids. Many researchers have discussed that KVs are nucleated into to intermetallic compounds layers. Reviewing the significant parameters for developing the KV in solid–liquid and solid–solid conditions is essential. Hence, in this review, the potential process of development of the KVs, concepts of thermodynamics, chemical reactions, and growth kinetics are developed. The position and reduction of KVs nucleation are also explained in this paper.

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Section: Explanation For Suppression Of Void Nucleationmentioning

confidence: 99%

Nucleation and Location of Kirkendall Voids at the Tin‐Based Solder/Copper Joint: A Review

Pal

Bajaj²

2023

Adv Eng Mater

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“…The conduction band E(k)-k model [10,[12][13][14][15] of Si material under uniaxial strain is the basis for constructing the carrier mobility model of Si material. Based on the Schrödinger equation, the potential energy operator is established, and the strain Hamiltonian H ε,ν is introduced.…”

Section: E(k)-k Modelmentioning

confidence: 99%

Variable mechanism of electrical impedance for MCT high voltage switch under synergetic action of the mechanical and electric loads

Chen,

Guo,

Guo

et al. 2023

Phys. Scr.

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To study the electromechanical coupling effect of Metal Oxide Semiconductor Controlled Thyristor (MCT) high voltage switch under the synergistic action of mechanical load and strong voltage in the actual use of penetrating hard targets and launching, the universal testing machine was used to simulate the overload environment. The rising edge time, falling time and impedance changes in the conduction path of MCT under different stress–strain were tested, respectively. Experimental results showed that the rise time of MCT decreased from 0.08 ms to 0.03 ms when the uniaxial compressive stress increased from 1.20 MPa to 7.3 MPa, and the rising edge time after unloading was 0.04 ms. The falling time had no obvious change with the increase of stress. The total resistance in the path decreased from 833.30 Ω to 564.22 Ω with the increase of strain. The stress–strain of each part of MCT under different uniaxial compressive stress was collected by COMSOL Multiphysics finite element software. Based on the Schrödinger equation, the potential energy operator was established. By introducing the strain Hamiltonian H ε,ν , the E(k)-k model near the minimum value of the conduction band of Si was established by using the k·p perturbation method. Combined with the physical field interface of Schrödinger equation in COMSOL Multiphysics, the valence band structure of Si material under uniaxial strain was studied on the basis of strain Hamiltonian perturbation. The results showed that the 6-degree degenerate valley (Δ6) in the conduction band was split into a 2-degree degenerate valley (Δ2) and a 4-degree degenerate valley (Δ4) due to the stress effect. The strain caused more electrons to occupy the lower Δ4 energy valley, resulting in a decrease in the effective mass of the total conductivity. Therefore, the electron mobility of Si was increased under uniaxial strain. The uniaxial compressive stress could more effectively reduce the curvature radius of valence band top, the effective mass of carriers and the interband scattering between light and heavy hole bands, which was beneficial to improve the hole mobility.

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“…The mechanical properties of silicon have been extensively studied, with particular interest paid to understanding the impact of the applied strain rate on silicon’s mechanical performance, fracture behavior, and deformation mechanisms [ 74 , 75 ]. Investigating these aspects not only enhances our comprehension of damage tolerance and deformation behavior [ 76 ] but also opens up new possibilities and challenges for silicon nanodevices and silicon-based anodes [ 77 ].…”

Section: Models and Simulation For Dwsmentioning

confidence: 99%

Recent Advances in Precision Diamond Wire Sawing Monocrystalline Silicon

Zhou³

et al. 2023

Micromachines

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Due to the brittleness of silicon, the use of a diamond wire to cut silicon wafers is a critical stage in solar cell manufacturing. In order to improve the production yield of the cutting process, it is necessary to have a thorough understanding of the phenomena relating to the cutting parameters. This research reviews and summarizes the technology for the precision machining of monocrystalline silicon using diamond wire sawing (DWS). Firstly, mathematical models, molecular dynamics (MD), the finite element method (FEM), and other methods used for studying the principle of DWS are compared. Secondly, the equipment used for DWS is reviewed, the influences of the direction and magnitude of the cutting force on the material removal rate (MRR) are analyzed, and the improvement of silicon wafer surface quality through optimizing process parameters is summarized. Thirdly, the principles and processing performances of three assisted machining methods, namely ultrasonic vibration-assisted DWS (UV-DWS), electrical discharge vibration-assisted DWS (ED-DWS), and electrochemical-assisted DWS (EC-DWS), are reviewed separately. Finally, the prospects for the precision machining of monocrystalline silicon using DWS are provided, highlighting its significant potential for future development and improvement.

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Electronic and mechanical properties of monocrystalline silicon doped with trace content of N or P: A first-principles study

Cited by 22 publications

References 19 publications

Nucleation and Location of Kirkendall Voids at the Tin‐Based Solder/Copper Joint: A Review

Nucleation and Location of Kirkendall Voids at the Tin‐Based Solder/Copper Joint: A Review

Variable mechanism of electrical impedance for MCT high voltage switch under synergetic action of the mechanical and electric loads

Recent Advances in Precision Diamond Wire Sawing Monocrystalline Silicon

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