Electronic and optical excitation properties of vanadium pentoxide V2O5

Enhanced solar water splitting of BiVO4photoanodes byin situsurface band edge modulation

“…1c shows that V 2 O 5 has distinct p-type semiconductor characteristics with a band gap of 2.02 eV. 40 The density of states (DOS) analysis shows (Fig. 1a and b) that for the BiVO 4 and BiVO 4 –V Bi structures, the conduction band energy levels are mainly composed of V atomic energy levels, and the valence band energy levels are mainly composed of O atomic energy levels.…”