Electronic and Optical Modulation of Pine Tree-like Nanostructures of Gallium Nitride

Abstract

We present the synthesis and characterization of gallium nitride (GaN) pine tree-like nanostructures (PTLNs) grown by low-pressure chemical vapor deposition. A high yield of PTLNs is densely arranged with each PTLN having a typical length of 15.46 ± 3.38 μm. From Raman spectroscopy, we observe an E 2 H peak at 570 ± 6 cm–1 which is the primary characteristic of wurtzite. X-ray and ultraviolet photoemission spectroscopy reveal that the electronic structures of GaN PTLNs indicate an n-type character, while the work function and valence band maximum are determined to be 3.30 ± 0.05 and 3.85 ± 0.08 eV, respectively. We confirm the electronic nature of our structure from the current–voltage characteristics exhibiting rectifying behavior. Density functional theory calculations of GaN PTLNs modeled by germanium-doped GaN nanowires are consistent with our experimental findings. To summarize, the energy-band diagram is presented for the future of GaN PTLNs in the optoelectronic and sensing applications.

Localized Visible Wavelength Photoluminescence from GaP/InP Heterostructure Nanowires

“…Nanosize light emitters are crucial for applications as a single-photon source in quantum technologies. , Of these, nanolight emitters emitting in visible wavelengths are also of particular interest. − One way to realize nanoscale light emitters is through NW synthesis/growth. Phosphide-based NWs have been demonstrated for various applications such as light emitters, − photovoltaic devices, , and energy storage. − However, there are only few reports on the GaP/InP system. , Electroluminescence emission from the InP NW light-emitting diode has been demonstrated, which shows the feasibility of accessing one single emitter at a time .…”