Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN

Li, S. X.; Yu, Kin Man; Jones, R. E.; Wu, Junqiao; Walukiewicz, W.; Ager, Joel W.; Shan, W.; Häller, E. E.; Lu, Hai; Schaff, William J.; Kemp, W.T.

doi:10.1557/proc-864-e7.10

Cited by 3 publications

(3 citation statements)

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“…In the previous research [32], the free electron concentrations of irradiated GaN and InGaN significantly changed compared to those of samples before irradiation. Radiation-induced defects in GaN layers and InGaN layers of the InGaN/GaN SLS are expected to show influences on the local electron concentration.…”

Section: Resultsmentioning

confidence: 82%

“…The proportions of various defects shown in this paper would aid experimentalists in identifying the factors influencing radiation-induced changes in electronic and optical properties. Considering previous researches about V Ga , I Ga , V N , and I N in GaN and InGaN [27,28,32,37,43,49], the different effects of V Ga , I Ga , V N , and I N on the local carrier concentration and carrier mobility could help explain the microscopic reason for the changes in the photoluminescence spectra and the decrease of photoelectric conversion efficiency.…”

Section: Resultsmentioning

confidence: 93%

“…Compared with the charge-state transition levels of V Ga in GaN, the charge-state transition levels of V Ga in In x Ga 1−x N (x < 0.2) shift slightly with respect to the InGaN VBM [29]. For n-type GaN and In x Ga 1−x N (x < 0.34), V Ga reduces the free electron concentration [28,[30][31][32].…”

Section: Resultsmentioning

confidence: 97%

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Radiation-induced defects in the InGaN/GaN superlattice structure

Li,

Jiang,

et al. 2024

Phys. Scr.

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With the molecular dynamics method, this paper investigates radiation-induced defects in the In0.16Ga0.84N/GaN superlattice structure (SLS) and the In0.04Ga0.96N/GaN SLS. In the temporal evolution of cascades, most of vacancies recombine with interstitials. The Monte Carlo simulations about the proportions of PKAs induced by 3 MeV protons were also considered in this work for calculating the weighted averages of surviving defects. For the In0.16Ga0.84N/GaN SLS irradiated by protons, around 82.6 percent of surviving vacancies are Ga vacancies while around 88.9 percent of surviving interstitials are Ga interstitials. For the In0.04Ga0.96N/GaN SLS irradiated by protons, around 87.3 percent of surviving vacancies are Ga vacancies while around 88.6 percent of surviving interstitials are Ga interstitials. N vacancies, N interstitials, and In vacancies also exist in irradiated InGaN/GaN SLS. Details about different types of defects are presented in this paper, which helps explain the microscopic mechanism of irradiated InGaN/GaN SLS. Since different types of defects have different influences on electronic and optical properties, simulations about the proportions of various defects in irradiated InGaN/GaN SLS help experimentalists find the effective factors of radiation-related changes in electronic and optical properties.

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Section: Resultsmentioning

confidence: 82%