Electronic and optical properties of CdTe under hydrostatic pressure effect

Merad, A.E.; Kanoun, Mohammed Benali; Aourag, H.; Cibert, J.; Merad, G.

doi:10.1006/spmi.2002.1054

Cited by 9 publications

(6 citation statements)

References 21 publications

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“…Our results for these materials agree well with the only available experimental [63] value of e 14 for GaN and other theoretical works [33,34,53,61,64]. To facilitate further comparison with other III-V and II-VI systems, we collect the piezoelectric constants and transverse effective charge for a number of III-V and II-VI compounds from references [65][66][67][68][69][70] in table 10. It is well known that the nitrides follow qualitatively a well-defined III-V trend: the piezoelectric constants increase in magnitude as a function of the anion chemical identity as one moves upwards within period V, i.e.…”

Section: Piezoelectric Constants and Transverse Effective Charges: Pr...supporting

confidence: 83%

“…It is well known that the nitrides follow qualitatively a well-defined III-V trend: the piezoelectric constants increase in magnitude as a function of the anion chemical identity as one moves upwards within period V, i.e. from Sb to N, because the ionic contribution tends to prevail over the electronic clampedion term as the anion becomes lighter [65][66][67][68][69][70].…”

Section: Piezoelectric Constants and Transverse Effective Charges: Pr...mentioning

confidence: 99%

“…Piezoelectric constants (in C/m 2 ) and transverse effective charge (in e) of several zinc-blende compounds reported in references[65][66][67][68][69][70].…”

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confidence: 99%

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Zinc-blende AlN and GaN under pressure: structural, electronic, elastic and piezoelectric properties

Kanoun

Goumri‐Said

Merad

et al. 2004

Semicond. Sci. Technol.

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In this paper we report a theoretical study of the structural, elastic, electronic and piezoelectric properties of zinc-blende AlN and GaN under the pressure effect. The study is focused on the first-principles all electron full-potential augmented plane wave plus local orbitals calculations within the density-functional theory. The results of bulk properties, including lattice constants, bulk modulus and derivatives and band structures are obtained and compared using both the local density approximation (LDA) and the generalized gradient approximation (GGA) for the exchange-correlation functional. We find that the GGA does not give a significant improvement over LDA. We also report calculations for elastic constants as well as the internal-strained parameter and their behaviour under pressure. The electronic energy levels and ionicity factor are studied under hydrostatic pressure. We extend our investigation to the study of the stress effect on piezoelectric constants and transverse effective charges. Our results show that III-V nitrides resemble II-VI compounds in terms of the sign of the piezoelectric constants. The piezoelectric constants and transverse effective charges vary nonlinearly with pressure.

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Section: Piezoelectric Constants and Transverse Effective Charges: Pr...supporting

confidence: 83%

Section: Piezoelectric Constants and Transverse Effective Charges: Pr...mentioning

confidence: 99%

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Zinc-blende AlN and GaN under pressure: structural, electronic, elastic and piezoelectric properties

Kanoun

Goumri‐Said

Merad

et al. 2004

Semicond. Sci. Technol.

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“…According to the reports 1, the energy of the probe beam used in the experiment (1.57 eV) is just at the absorption edge of the QDs at ambient pressure. As pressure increasing the absorption edge quickly shifts to higher energies 20 and the probe is no longer absorbed, so the intensity of the transient absorption signal quickly decreases and is no longer observed above 2.5 GPa. On the other side, the blue shift of all QDs energy levels also decreases the absorption coefficient at the pump energy (3.14 eV).…”

Section: Resultsmentioning

confidence: 99%

“…The basic effect of pressure is to increase overlap between adjacent electronic orbitals, this leading to the energy shift of one set of orbitals with respect to another. This shift results in the blue shift of the absorption edge in CdTe QDs 20, which implies that the band gap is broadened under high pressure. Correspondingly the conduction band states and the surface trapped states are condensed, and then the carrier trapping in surface states is faster and faster under pressure.…”

Section: Resultsmentioning

confidence: 99%

Time‐resolved ultrafast carrier dynamics in CdTe quantum dots under high pressure

Liu

et al. 2011

Physica Status Solidi (b)

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Ultrafast carrier relaxation in CdTe quantum dots (QDs) was studied under high pressure by using femtosecond transient absorption spectroscopy. The pressure effects on the carrier relaxation time are obtained for surface trapped electron-hole recombination and electronic Auger recombination processes. The decrease of the transient absorption signals and the change of sample colour with pressure are assigned to the shift of the energy levels. This shift of the energy levels can lead to an electron transition for materials. And the abrupt changes of the relaxation time at 0.5 and 1.5 GPa are attributed to the electron transition in CdTe QDs under high pressure. Therefore, the high-pressure ultrafast carrier dynamics research provides a new approach for studying the electron transition in condensed matter.

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CdTe: energy gaps, temperature and pressure dependence

Gutowski¹,

Sebald²,

Voss³

New Data and Updates for II-VI Compounds

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Electronic and optical properties of CdTe under hydrostatic pressure effect

Cited by 9 publications

References 21 publications

Zinc-blende AlN and GaN under pressure: structural, electronic, elastic and piezoelectric properties

Zinc-blende AlN and GaN under pressure: structural, electronic, elastic and piezoelectric properties

Time‐resolved ultrafast carrier dynamics in CdTe quantum dots under high pressure

CdTe: energy gaps, temperature and pressure dependence

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