Electronic and optical properties of La‐aluminate dielectric thin films on Si (100)

Abstract

Electronic and optical properties of (La

Stopping powers and inelastic mean free path of 200 eV–50 keV electrons in polymer PMMA, PE, and PVC

“…In the calculation of ELF from quantitative analysis of REELS spectra, Tougaard (2012a, 2012b), Tahir et al (2009Tahir et al ( , 2010bTahir et al ( , 2010cTahir et al ( , 2010a, Denny et al (2012), and Shin et al (2012) used the semi-classical dielectric response model proposed by Tougaard and Yubero (Yubero et al, 1996;Tougaard and Yubero, 2008;Romanyuk et al, 2011). The algorithms of this method have been implemented in the generally available QUEELS-ε(k,ω)-REELS software package (Tougaard and Yubero, 2008).…”

Stopping Powers and Inelastic Mean Free Path of 100 eV to 30 keV Electrons in Zirconium Silicates

“…al. [13,16,18,[20][21][22][23][24][25] have employed the semi-classical dielectric response model proposed by Tougaard and Yubero [26][27][28][29] in their calculation of ELF. The algorithms of this method have been implemented in the generally available QUEELS-(k,)-REELS software package [29].…”

“…The algorithms of this method have been implemented in the generally available QUEELS-(k,)-REELS software package [29]. The validity and consistency of this method was extensively tested recently [21] and it has also previously been successfully used to obtain the ELFs and optical properties of ultrathin dielectric [15,16,18] semiconductor [17], polymer [22], metals [14,23], and transparent oxide films [20,21,24,25]. In Ref.…”

“…[15] have been compared with experimental optical data and the method was validitated. Further, the method was successfully employed to obtain the ELFs of ultrathin dielectrics, semiconductors, polymers, metals, and transparent oxide films [14][15][16][17][18][19][20][21][22][23][24][25]. Figure 1 shows the ELFs of (ZrO 2 ) x (SiO 2 ) 1-x (x=1, 0.75, 0.5, 0.25, 0) from Refs.…”

“…REELS is surface sensitive and the spectra carries information on the electronic structure of the material because the energy loss experienced by the incident electron depends on the electronic structure of the material. The spectra can easily be recorded over a wide energy-loss range [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29]. The calculation of the ELFs of zirconium oxide, silicon dioxide, and zirconium silicates from REELS spectra has already been performed by Tahir et.…”