Electronic and optoelectronic characteristics of Al/MnSe2/p-Si/Al diode

Babeer, Afaf M.

doi:10.1016/j.molstruc.2021.131047

Cited by 7 publications

(3 citation statements)

References 42 publications

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“…There are many examples of this in the literature and the effect of SC metal thickness on the diode parameters has been investigated by several researchers [40][41][42][43][44][45][46]. The increase in Φ b0 with decreasing SC metal thickness has been ascribed to the change in impurity concentration of the semiconductor substrate near the metal contact because of the change in interface state charge at the MS contact interface [47][48][49][50]; this is supported by secondary-ion mass spectrometry measurements by Jang and Lee [43].…”

Section: Resultsmentioning

confidence: 87%

A highly stable temperature sensor based on Au/Cu/n-Si Schottky barrier diodes dependent on the inner metal thickness

Efeoǧlu¹,

Türüt²

2022

J. Phys. D: Appl. Phys.

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We have fabricated the Au/n-Si (D1), Au/Cu/n-Si (D2), Au/Cu(4nm)/n-Si (D3) and Au/Cu(2nm)/n-Si (D4) Schottky-barrier diodes (SBDs). The thickness of the Cu Schottky contact (SC) films for the D2, D3, and D4 diodes has been chosen as 100, 4 and 2 nm, respectively. We have investigated the thermal sensitivity from the voltage-temperature (V-T) characteristics of the SBDs at different current levels. The V-T measurements have been made in the temperature range from 10 K to 320 K with steps of 2 K, at the different current levels from 50 nA to 141.70 µA. The V-T curves have shown a good linearity degree for all SBDs. The slope dV/dT = α or thermal sensitivity coefficient α for each diode has decreased with increasing current level from 50 nA to 141.70 µA. But, it has been seen that the SBDs with the Cu SC have approximately the same α value as independent of metal thickness at the same current level. That is, the thermal sensitivity coefficient value has changed approximately from 2.48 mV/K at 50 nA to 1.82 at 141.70 µA for the SBDs with Cu Schottky contact as independent metal thickness. Furthermore, the α versus current level plots of the diodes have exhibited a linear behavior. The intercept α0 and slope dα/dI values of the α versus current level plots have been obtained as 2.80 mV/K and -0.0843 mV/(AK) for D2, and 2.85 mV/K and -0.092 mV/(AK) for D3 and 2.83 mV/K and -0.0876 mV/(AK) for D4. These values are very close to each other and the difference between the slope (dα/dI) values is small enough to be neglected.

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Section: Resultsmentioning

confidence: 87%

A highly stable temperature sensor based on Au/Cu/n-Si Schottky barrier diodes dependent on the inner metal thickness

Efeoǧlu¹,

Türüt²

2022

J. Phys. D: Appl. Phys.

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“…[ 1–3 ] MnSe 2 semiconductor, as one of typical TMD materials, possesses excellent photoelectric properties, such as high carrier mobility, wide band gap, and high light absorption coefficient, has been widely used to manufacture electronic devices and optoelectronic devices. [ 4–8 ]…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3] MnSe 2 semiconductor, as one of typical TMD materials, possesses excellent photoelectric properties, such as high carrier mobility, wide band gap, and high light absorption coefficient, has been widely used to manufacture electronic devices and optoelectronic devices. [4][5][6][7][8] Recently, nanostructured MnSe 2 has attracted great interest due to its unique and fascinating magnetic properties. [9][10][11] Compared to bulk materials, the high surface to volume ratio in nanomaterials usually lead to the reduced coordination and lack of symmetry of surface spins, which is believed to be the main reason for the significant change in the magnetic order.…”

Section: Introductionmentioning

confidence: 99%

Top‐Down Preparation and Magnetic Properties of MnSe₂ Nanoparticles

Liang,

Yu,

et al. 2024

Physica Status Solidi (a)

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Nanostructured transition metal dichalcogenide MnSe2 has attracted much attention due to its fascinating magnetic properties. In this article, a series of MnSe2 nanoparticles with different particle sizes are successfully prepared by a facile top‐down method of solid‐state reaction combined with ball milling, and the effects of ball milling on the phase composition, microstructure and magnetic properties of the MnSe2 are systematically studied. The results show that pure MnSe2 microparticles are obtained by the solid‐state reaction, however, partial MnSe2 is decomposed after ball milling for 16 h. The average particle size of the MnSe2 gradually decreases with the increase of milling time. MnSe2 nanoparticles with average particle size approximately 65 nm are obtained after milling for 40 h. After milling, the antiferromagnetic MnSe2 nanoparticles exhibit weak ferromagnetic characteristics due to the surface effect and the microstrain induced by ball milling. The residual magnetization (Mr) and coercivity (Hc) of the sample gradually increase as the particle size decreases. The Mr and Hc of the sample milled for 40 h reach 70.13 × 10−4 emu g−1 and 67.47 Oe, respectively.

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Fabrication of 1.6V hybrid supercapacitor developed using MnSe2/rGO positive electrode and phosphine based covalent organic frameworks as a negative electrode enables superb stability up to 28,000 cycles

Sajjad

Ismail

Shah

et al. 2021

Journal of Energy Storage

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Electronic and optoelectronic characteristics of Al/MnSe2/p-Si/Al diode

Cited by 7 publications

References 42 publications

A highly stable temperature sensor based on Au/Cu/n-Si Schottky barrier diodes dependent on the inner metal thickness

A highly stable temperature sensor based on Au/Cu/n-Si Schottky barrier diodes dependent on the inner metal thickness

Top‐Down Preparation and Magnetic Properties of MnSe₂ Nanoparticles

Fabrication of 1.6V hybrid supercapacitor developed using MnSe2/rGO positive electrode and phosphine based covalent organic frameworks as a negative electrode enables superb stability up to 28,000 cycles

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Electronic and optoelectronic characteristics of Al/MnSe2/p-Si/Al diode

Cited by 7 publications

References 42 publications

A highly stable temperature sensor based on Au/Cu/n-Si Schottky barrier diodes dependent on the inner metal thickness

A highly stable temperature sensor based on Au/Cu/n-Si Schottky barrier diodes dependent on the inner metal thickness

Top‐Down Preparation and Magnetic Properties of MnSe2 Nanoparticles

Fabrication of 1.6V hybrid supercapacitor developed using MnSe2/rGO positive electrode and phosphine based covalent organic frameworks as a negative electrode enables superb stability up to 28,000 cycles

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Product

Resources

About

Top‐Down Preparation and Magnetic Properties of MnSe₂ Nanoparticles