Electronic and structural properties of implanted xenon in amorphous silicon

Barbieri, P.F.; Landers, Richard; Marques, F. C.

doi:10.1063/1.2723072

Cited by 6 publications

(5 citation statements)

References 25 publications

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“…The appearance of the SiN y intergranular phase, therefore, implies massive chemical and possibly also geometrical changes to the vicinity of implanted argon atoms. Chemical shifts in the XPS analysis of rare gas atoms implanted in solid matrices where previously described for noble metals19 and amorphous silicon43 matrices, and are related to the chemical environment (nature and geometry of the atomic arrangement around the implantation site, size of the voids where the implanted atoms are trapped) of implanted atoms. In this study, the total BE shift of the Ar 2p 3/2 photoelectron line between pure AlN and pure SiN y is of the order of − 1 eV, assuming a constant line position for the gold reference.…”

Section: Discussionmentioning

confidence: 99%

Charge referencing issues in XPS of insulators as evidenced in the case of Al‐Si‐N thin films

Pélisson-Schecker

Hug

Patscheider

2011

Surface & Interface Analysis

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Accurate charge referencing in XPS of insulating specimens is a delicate issue. This difficulty is illustrated in the case of Al-Si-N composite thin films deposited by reactive magnetron sputtering with variable composition from pure aluminum nitride to pure silicon nitride. The samples were mounted with Au-coated metallic clamps. Argon sputter cleaning was required to remove a surface native oxide before analysis. For charge referencing implanted argon atoms from the sputter gas and a small amount of gold re-deposited from the metallic clamps onto the specimen surface during sputter cleaning were evaluated. For the argon atoms, a surprisingly large chemical shift (∼1 eV) and a significant peak broadening (0.6 eV) of the Ar 2p 3/2 photoelectron line were found with varying the Si content of the films. This could be related to chemical and structural changes of the Al-Si-N films. Hence implanted argon could not be used for charge referencing of Al-Si-N samples. In contrast to the implanted argon, the Au 4f 7/2 line width of the gold re-deposited onto the sample surface did not depend on the Si content of Al-Si-N films. A constant energy shift (∼1.2 eV) of the Au 4f 7/2 line as compared with bulk gold was, however, found, which was related to the size of gold particles formed on the insulating films. Therefore gold could be reliably used to study chemical shifts of sample-relevant species in Al-Si-N films, but the absolute binding energies of Al 2p, Si 2p and N 1s photoelectrons could not be determined.

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Section: Discussionmentioning

confidence: 99%

Charge referencing issues in XPS of insulators as evidenced in the case of Al‐Si‐N thin films

Pélisson-Schecker

Hug

Patscheider

2011

Surface & Interface Analysis

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“…This is also applicable to semiconducting matrices, where BE shifts are due to a mixture of initial and final state effects. [10][11][12] Although the interpretation in terms of initial and/or final effects is difficult in mixed cases, a qualitative explanation of the BE shift in, for example, Ar core levels due to intrinsic stress within the film can be made. 13,14 Here, we present measurements of Ar embedded within insulating samples (Al 2 O 3 ), where the BE shifts observed in the Ar2p core levels are unequivocally associated with initial state effects.…”

Section: Introductionmentioning

confidence: 99%

Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films

Prenzel

Arcos

Kortmann

et al. 2012

Journal of Applied Physics

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Articles you may be interested inA reactive magnetron sputtering route for attaining a controlled core-rim phase partitioning in Cu2O/CuO thin films with resistive switching potential Preparation of α -Al 2 O 3 thin films by electron cyclotron resonance plasma-assisted pulsed laser deposition and heat annealing Structure of nitrogenated carbon films prepared from acetylene and nitrogen mixture in electron cyclotron resonance plasma Al 2 O 3 thin films, either amorphous or of varying degrees of crystallinity, were deposited by two-frequency radio-frequency magnetron sputtering. Film crystallinity was investigated by Fourier transform infrared spectroscopy and X-ray diffraction (XRD). X-ray photoelectron spectroscopy (XPS) was employed to determine the amount of Ar naturally trapped within the films during the deposition process. A clear correlation was found between the existence of crystalline phases, as determined by XRD, and a shift towards lower binding energy positions of the Ar2p core levels of embedded gas. The shift is due to differences in the local Al 2 O 3 matrix (amorphous or crystalline) of the embedded gas, thus, providing an XPS fingerprint that can be used to qualitatively determine the presence or absence of crystalline phases in very thin films. V C 2012 American Institute of Physics.

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“…The equipment, namely the TDS spectrometer used for gas release measurements was described in details previously [29][30][31][32][33]. A short description is given here for completeness.…”

Section: Methodsmentioning

confidence: 99%

“…Moreover, co-implantation with other gases was also applied. It should be mentioned here that the release of heavier inert gases (including Ar [26][27][28][29], Xe [30][31][32] and Kr [33]) implanted with different energies was also studied, however desorption activation energies were usually higher for such gases than for lighter ones.…”

Section: Introductionmentioning

confidence: 99%

Thermal Desorption of Argon Implanted into Gallium Arsenide

Turek¹,

Droździel²,

Pyszniak³

et al. 2022

Adv. Sci. Technol. Res. J.

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Thermal desorption of Argon (Ar) implanted with energies 150 keV and 100 keV with fl uence 1×10 16 cm -2 into gallium arsenide is considered. A sudden release of Ar is observed in temperature range 1100-1180 K as a single narrow peak in TDS (Thermal Desorption Spectroscopy) spectra. This is accompanied by a strong background signal from atmospheric Ar trapped in various parts of the spectrometer. Desorption peak shift analysis allows estimation of desorption activation energy values -these are 3.6 eV and 2.5 eV for implantation energies 150 keV and 100 keV, respectively. These results are comparable to that measured for Ar implanted into germanium target.

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Electronic and structural properties of implanted xenon in amorphous silicon

Cited by 6 publications

References 25 publications

Charge referencing issues in XPS of insulators as evidenced in the case of Al‐Si‐N thin films

Charge referencing issues in XPS of insulators as evidenced in the case of Al‐Si‐N thin films

Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films

Thermal Desorption of Argon Implanted into Gallium Arsenide

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