Improving the thermoelectric performance of PbSe over its previously reported maximum zT can be achieved by engineering its electronic band structure. We demonstrate here, using optical absorption spectra, first principles calculations, and temperature dependent transport measurements, that alloying PbSe with SrSe leads to a dramatic change of the band structure that increases the thermoelectric figure of merit, zT. The temperature where the two valence bands converge decreases with Sr addition. The zT value, when the carrier density is optimized, increases with Sr addition in Pb 1Àx Sr x Se and when x ¼ 0.08 a maximum zT of 1.5 at 900 K is achieved. The net benefit in zT comes from the band structure tuning even though in other thermoelectric solid solutions it is the thermal conductivity reduction from disorder that leads to net zT improvement.
Broader contextBand engineering in semiconductors is important for their application in electronic or optoelectronic devices. For heavily doped thermoelectric semiconductors it is also crucial for the high zT found in PbTe 1Àx Se x , Pb 1Àx Mg x Te, and Mg 2 Si 1Àx Sn x . For high temperature bulk thermoelectrics, most of such engineering is realized by forming solid solutions. In this study we demonstrate successful band tuning of p-type PbSe, the slightly lower zT analog of the well-known thermoelectric compound PbTe, using Pb 1Àx Sr x Se solid solutions. It is well known that formation of solid solutions is desirable for thermoelectrics due to their lower thermal conductivities. We demonstrate here that the ability to change not only the band gap but also the relative positions of different band maxima provides another important benet for solid solutions as thermoelectrics. Actually, we found in these alloys that the reduction of lattice thermal conductivity by alloying has been compensated by the counter effect of the reduced carrier mobility, as also been found in the n-type solid solutions PbTe 1Àx Se x and PbSe 1Àx S x where simply forming solid solutions without the band engineering effect does not improve zT. Therefore we conclude that the change in the band structure with formation of solid solution accounts for the improvement of zT in p-type PbSe from 1.1 to 1.5 at 900 K.