Electronic and transport properties of Li-doped NiO epitaxial thin films

Zhang, J. Y.; Li, Weiwei; Hoye, Robert L. Z.; MacManus‐Driscoll, Judith L.; Budde, Melanie; Bierwagen, Oliver; Wang, L.; Du, Yingge; Wahila, Matthew J.; Piper, Louis F. J.; Lee, T.-L.; Edwards, Holly; Dhanak, Vin; Zhang, K. H. L.

doi:10.1039/c7tc05331b

Cited by 146 publications

(156 citation statements)

References 70 publications

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“…It is known that the electrocatalytic activities of catalysts are strongly related to their microstructures and ECSA. Hence, researchers have paid more and more attention to the construction of Ni/Fe-based Ni nanotube arrays [25] and Ni x Fe y -O nanocatalysts [26] compared to pure Ni/Fe-based mixed-metal oxides recently. For example, based on the dealloying inheritance effect and eutectic reaction, novel Ni-Fe-O based composite with a unique mesoporous nanowire network structure ( Figure 2D) is designed and synthesized by Zhang and co-workers.…”

Section: Ni/fe-based Mixed-metal Oxidesmentioning

confidence: 99%

Recent Development of Ni/Fe‐Based Micro/Nanostructures toward Photo/Electrochemical Water Oxidation

Gao

Yan

2019

Advanced Energy Materials

409

208

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The oxygen evolution reaction (OER), as an important process involved in water splitting and rechargeable metal–air batteries, has drawn increasing attention in the context of clean energy generation and efficient energy storage. This review concerns the progress and new discoveries in the field of Ni/Fe‐based micro/nanostructures toward electrochemical and photo‐electrochemical (PEC) water oxidation during last few years. First, toward the design and construction of new electrocatalysis, different types of current Ni/Fe‐based compounds for OER are summarized. The mechanism studies of the active phases and positions of Ni/Fe‐based micro/nanostructures are further introduced to understand the properties of catalytic active sites, which could facilitate further improving the performance of Ni/Fe‐based OER electrocatalysts. Second, splitting water using sunlight with low overpotential is another important target in making solar‐to‐hydrogen micro/nanodevices, and thus attention is then focused on the development of several important Ni/Fe‐based PEC catalysts. Third, the recent theoretical calculations on the OER mechanism during water splitting and insights into electronic structures are analyzed; finally, the future trends and perspectives are also discussed briefly.

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Section: Ni/fe-based Mixed-metal Oxidesmentioning

confidence: 99%

Recent Development of Ni/Fe‐Based Micro/Nanostructures toward Photo/Electrochemical Water Oxidation

Gao

Yan

2019

Advanced Energy Materials

409

208

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“…1,10,11 Additionally, NiO can be used as a hole transport and electron blocking layer in organic solar cells. 12 NiO films have already been grown by many methods, including sputtering, [13][14][15] metal evaporation with oxygen or nitrogen dioxide inlet, 16 pulsed laser deposition (PLD), 3,17 sol-gel coating, 18 or plasma-assisted molecular beam epitaxy (PA-MBE). 19 As an alloy together with MgO it is also interesting for deep-ultraviolet photodetectors, offering a band gap tuning between 3.6 and 7.8 eV.…”

Section: Introductionmentioning

confidence: 99%

“…21 The common rock-salt crystal structure with similar lattice constants of MgO (0.4212 nm) and NiO (0.4176 nm) and low lattice mismatch < 1 % makes MgO a widely-used, suitable substrate to epitaxially grow high quality NiO layers. 3,19 In addition, MgO was found to be a good electron blocking layer for GaN/NiO based diodes. 22 Detailed investigations about the epitaxial growth of NiO at different growth conditions, however, are very rare: Warot 19 In this study we investigate the PA-MBE growth and properties of NiO thin films on different MgO orientations and under a wider range of growth conditions with the goal of realizing high quality single crystalline layers.…”

Section: Introductionmentioning

confidence: 99%

Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy

Budde

Tschammer

Franz

et al. 2018

Journal of Applied Physics

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NiO layers were grown on MgO(100), MgO(110) and MgO(111) substrates by plasma-assisted molecular beam epitaxy under Ni-flux limited growth conditions. Single crystalline growth with a cube-on-cube epitaxial relationship was confirmed by X-ray diffraction measurements for all used growth conditions and substrates except MgO(111). A detailed growth series on MgO(100) was prepared using substrate temperatures ranging from 20°C to 900°C to investigate the influence on the layer characteristics. Energy-dispersive X-ray spectroscopy indicated close-to-stoichiometric layers with an oxygen content of ≈ 47 at.% and ≈ 50 at.% grown under low and high O-flux, respectively. All NiO layers had a root-mean-square surface roughness below 1 nm, measured by atomic force microscopy, except for rougher layers grown at 900°C or using molecular oxygen. Growth at 900°C led to a significant diffusion of Mg from the substrate into the film. The relative intensity of the quasi-forbidden one-phonon Raman peak is introduced as a gauge of the crystal quality, indicating the highest layer quality for growth at low oxygen fluxes and high growth temperature, likely due to the resulting high adatom diffusion length during growth. Optical and electrical properties were investigated by spectroscopic ellipsometry and resistance measurements, respectively. All NiO layers were transparent with an optical band gap around 3.6 eV and semi-insulating at room temperature. However, changes upon exposure to reducing or oxidizing gases of the resistance of a representative layer at elevated temperature was able to confirm p-type conductivity, highlighting their suitability as a model system for research on oxide-based gas sensing.

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“…The spectra are recorded during NiO growth using the MLO process. The spectra of the thickest layer shows the typical features of NiO with a main emission line near 854 eV and a characteristic satellite emission at 1.5–2 eV higher binding energies . Identical spectra are obtained for magnetron‐sputtered films.…”

Section: Resultsmentioning

confidence: 62%

Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning

Poulain

Proost

Klein

2019

Physica Status Solidi (a)

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Different magnetron sputtering‐based deposition methods of nickel oxide SiO2‐passivated Si surfaces are compared. Results highlight that the presence of oxygen in the deposition chamber during reactive sputtering drastically affects the Si/SiO2 interface. An alternative method for the preparation of NiO is the sputtering of metallic nickel in oxygen‐free atmosphere followed by a post oxidation of the deposited layer in an oxygen atmosphere without plasma exposition is proposed. This method is introduced as metal layer oxidation (MLO). Using this technique, the barrier height on n‐type silicon increases from ≈0.4 eV for reactively sputtered NiO to more than 0.6 eV for the MLO method. In situ photoelectron spectroscopy evidences the formation of an extra electronic state when NiO is reactively sputtered, which is assigned to the intense oxygen ion bombardment of the Si/SiO2 surface during the process. This extra‐electronic state pins the silicon energy bands in an undesirable position. The extra‐electronic state is associated with oxygen interstitial in the SiO2 implanted during reactive sputtering.

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Electronic and transport properties of Li-doped NiO epitaxial thin films

Abstract: NiO is a p-type wide bandgap semiconductor of use in various electronic devices ranging from solar cells to transparent transistors. This work reports the controlling of conductivity and increase of work functions by Li doping.

Cited by 146 publications

References 70 publications

Recent Development of Ni/Fe‐Based Micro/Nanostructures toward Photo/Electrochemical Water Oxidation

Recent Development of Ni/Fe‐Based Micro/Nanostructures toward Photo/Electrochemical Water Oxidation

Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy

Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning

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