2021
DOI: 10.1021/acsaelm.0c00897
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Electronic and Transport Properties of Bilayer Phosphorene Nanojunction: Effect of Paired Substitution Doping

Abstract: Electron transport in bilayer phosphorene is studied using the first-principles and nonequilibrium Green's function formalism. We have explored the interlayer properties of a vertically stacked bilayer structure with paired substitutional doping. The electron transport properties are calculated in bilayer phosphorene and compared with substitutional doping, which shows the tunable anisotropic nature of doped phosphorene in the I−V characteristics. Further, to understand the role played by dopants, the quantum … Show more

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Cited by 18 publications
(12 citation statements)
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References 71 publications
(140 reference statements)
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“…The electric current was evaluated with the Landauer formula by the integration of the transmission function as per the following eqn (5).where T ( E , V b ) represents the bias dependent transmission probability of electrons entering with an energy ( E ) from the left (L) to the right (R) electrode with an applied finite bias voltage ( V b ), and f L ( E − μ L ) and f R ( E − μ R ) are the Fermi–Dirac distribution function and μ L/R represents the chemical potentials of the left and right electrodes. 14,38–40,43,46–51…”
Section: Model and Computational Detailsmentioning
confidence: 99%
“…The electric current was evaluated with the Landauer formula by the integration of the transmission function as per the following eqn (5).where T ( E , V b ) represents the bias dependent transmission probability of electrons entering with an energy ( E ) from the left (L) to the right (R) electrode with an applied finite bias voltage ( V b ), and f L ( E − μ L ) and f R ( E − μ R ) are the Fermi–Dirac distribution function and μ L/R represents the chemical potentials of the left and right electrodes. 14,38–40,43,46–51…”
Section: Model and Computational Detailsmentioning
confidence: 99%
“…At zero-bias, we have computed the conductance G = G 0 T(E F ), where G 0 = 2e 2 /h represents the quantum conductance, e (charge of the electron) and h (Plank's constant); respectively. 3,4,8,9,[38][39][40][41][42][43][44] The integration of eqn (3) provides the current i.e., I(V b ) (current under applied bias voltage (V b )), which can be computed by using the below equation:…”
Section: ) (Esi †)mentioning
confidence: 99%
“…where f (E À m L ) and f (E À m R ) represents the Fermi-Dirac functions for the electrons in the L and R nanoelectrodes, respectively. 3,4,8,9,31,[38][39][40][41][42][43][44][45][46][47][48]…”
Section: ) (Esi †)mentioning
confidence: 99%
“…Fig. 6, armchair NTs show varying electronic properties such as semiconducting in (2,2), semi-metallic in (3,3), and metallic in large diameter (4,4) NTs. Table II also gives information about the chiral vector, diameter, and respective electronic properties.…”
Section: Electronic Structure and Transport Propertiesmentioning
confidence: 99%
“…Low dimensional material research has produced exciting results by combining computational predictions, experimental synthesis, and characterization [1]. The immense interest in low dimensional materials is fueled by alluring properties and a broad range of potential applications, such as quantum computing, batteries, electrocatalysis, photovoltaics, electronics, bio-medicals, and photonics [2][3][4][5][6][7][8]. There exists a broad range of two-dimensional (2D), one-dimensional (1D), and even dot-like structures.…”
Section: Introductionmentioning
confidence: 99%