Electronic Attenuation of Longitudinal Soundwaves in Aluminium

Berre, B.; Olsen, T.

doi:10.1002/pssb.19650110217

Cited by 19 publications

(3 citation statements)

References 10 publications

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“…This can be done either by applying a high magnetic field (Olsen 1963, Berre andOlsen 1965), or by working with a superconducting metal in which the electronic contribution goes to zero at 0 'K. The latter technique was used in the present work.…”

Section: Introductionmentioning

confidence: 99%

Charge Storage Effects in Pseudomorphic High Electron Mobility Transistors

Schuermeyer

Cerny

Bozada

et al. 1997

Jpn. J. Appl. Phys.

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Aleasurements were made of the variation of ultrasonic attenuation in indium between 4.2 'ic and 1.3 " K for longitudinal waves at 50 Mc/s and 90 Mcis and for transverse waves at 50 h4c/s. T h e results were analysed to determine the electronic contribution to the total attenuation. Low-amplitude dislocation attenua. tion was significant. Amplitude-dependent attenuation was investigated qualitatively,The electronic attenuation and the electronic mean free path were very anisotropic, The transverse normal-state attenuation decreased with decreasing temperature, In spite of the increasing mean free path. T h e results are discussed in terms of a sue gested mean free path reduction near the edges of the Fermi surface in the reduced. zone scheme. T h e anisotropies are attributed to the combination of a sharply peaked electronic distribution function under the action of the ultrasonic wave, a Fermi surface with sharp edges, and a high probability of small-momentum scattering by thermal phonons For propagation along [110] the value of the average deformation parameter Ki is calculated to be equal to the free-electron value. For propagation normal to (111) K, is 267A greater than this value. These results, together with the large observed transverse attenuation in the superconducting state, indicate that band structure effects on the deformation parameters for indium are appreciable.

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Section: Introductionmentioning

confidence: 99%

Charge Storage Effects in Pseudomorphic High Electron Mobility Transistors

Schuermeyer

Cerny

Bozada

et al. 1997

Jpn. J. Appl. Phys.

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“…I n general the mean free path comes out considerably smaller than measured otherwise. The method has been improved by merely using the relhtions a1 ( B = 0) = C,, q F (q I ) (5.20) and iyl ( B +m) = C, q2 1 (5.69), and evaluating the constants Cg, C, and the mean free path 2 from al(B-t 00)a, ( B = 0) data for at least three different frequencies[278]. Whereas in A1 the coefficient C, N J (A,/w)' 31 dy (5.18) almost agrees with direct measurements in zero field [194] the values of the mean free path are once more too small[278].…”

mentioning

confidence: 99%

“…The method has been improved by merely using the relhtions a1 ( B = 0) = C,, q F (q I ) (5.20) and iyl ( B +m) = C, q2 1 (5.69), and evaluating the constants Cg, C, and the mean free path 2 from al(B-t 00)a, ( B = 0) data for at least three different frequencies[278]. Whereas in A1 the coefficient C, N J (A,/w)' 31 dy (5.18) almost agrees with direct measurements in zero field [194] the values of the mean free path are once more too small[278]. The advantage of the method lies in the fact that any constant non-electronic background attenuation is eliminated in the attenuation difference and must not be separately measured, e.g.…”

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confidence: 99%

Theory of Electromagnetic Waves in Metals and Their Interaction with Ultrasonic Waves (III)

Mertsching¹

1970

Physica Status Solidi (b)

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Measurement of the Magnitude of the Electronic Attenuation of Sound in Metals

Jones

1967

Physica Status Solidi (b)

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A discussion is presented of methods of measuring the total electronic component of the attenuation of sound waves in metals. Es werden Methoden zur Meseung der vollstilndigen elektronischen Komponente der Diimpfung von Sohallwellen in Metallen diskutiert.Considerable effort has been made to determine the magnitude of the electronphonon interaction in metals by means of the attenuation of sound waves. The aim of this note is to demonstrate that results can be obtained from relatively simple measurements.At these low phonon frequencies, several methods have been used for distinguishing the electronic component of the attenuation from other sources of dissipation. The most successful method has been on superconductors for which a t temperatures very much less than the transition temperature (T < T,) the electronic component decreases to zero so that the attenuation difference a (T = T,) -a (T = 0 ) gives the total electronic attenuation at T = T,. The frequency dependence of this effect has enabled Bliss and Rayne [l] to measure values of the anisotropy of the electronic attenuation in I n (longitudinal waves, q 1 > 1) (q is the sound wave vector and 1 the electron mean free path). In shear waves moreover Leibowitz and Fossheim [2] have been able to separate the electromagnetic and deformation potential parts of the electronic absorption in In (q l > 1) (see Appendix). This method is very powerful but is restricted to superconducting metals.The electronic component has also been distinguished from other absorption by measurements of the temperature dependence over a range where the electron mean free path is small, and there is little coupling to the sound wave down to the residual resistance region (e.g., Kolouch and McCarthy [3] polycrystalline Cu, q 1 < 1 ; Natale [a] polycrystalline K, q 1 < 1). This method is clean but relies on other sources of attenuation remaining constant with temperature.The limit q 1 > 1 should be investigated by this method as an extra Fermi surface parameter (I) is required for q 1 < 1 and values of I determined from the electrical conductivity seem always to give a value too small by a factor PW 1.6 compared with values taken from the attenuation either by comparison of the experimental magnitude with the free electron theory or from the Q of the magnetoacoustic effect.At high frequencies (and q I> 1) the electronic attenuation becomes dominant so that MacFarlane et al. [5] have been able to measure the frequency of

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Electronic Attenuation of Longitudinal Soundwaves in Aluminium

Cited by 19 publications

References 10 publications

Charge Storage Effects in Pseudomorphic High Electron Mobility Transistors

Charge Storage Effects in Pseudomorphic High Electron Mobility Transistors

Theory of Electromagnetic Waves in Metals and Their Interaction with Ultrasonic Waves (III)

Measurement of the Magnitude of the Electronic Attenuation of Sound in Metals

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