Electronic Band Structure and Material Gain of Dilute Nitride Quantum Wells Grown on InP Substrate

Gładysiewicz, M.; Kudrawiec, R.; Wartak, Marek S.

doi:10.1109/jqe.2015.2410340

Cited by 8 publications

(4 citation statements)

References 63 publications

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“…It is a simultaneous reduction of the band gap and the lattice constant due to the incorporation of nitrogen into III-V host. This feature makes dilute nitrides promising alloys for extending the emission of GaAs and InP-based lasers to longer wavelengths [5][6][7] and desired light absorbers in multijunction solar cells [8][9][10] . In addition dilute nitrides can be utilized as absorbers in intermediate band solar cells (IBSC), which have been proposed by Luque and Marti 11 for obtaining high-efficiency single junction solar cells 12 .…”

Section: Introductionmentioning

confidence: 99%

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Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, and localization of states

Polak

Kudrawiec

Rubel

2019

Journal of Applied Physics

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The electronic band structure of Ga(PAsN) with a few percent of nitrogen is calculated in the whole composition of Ga(PAs) host using the state-of-the-art density functional methods including the modified Becke-Johnson functional to correctly reproduce the band gap, and band unfolding to reveal the character of the bands within the entire Brillouin zone. As expected, relatively small amounts of nitrogen introduced to Ga(PAs) lead to formation of an intermediate band below the conduction band which is consistent with the band anticrossing model, widely used to describe the electronic band structure of dilute nitrides. However, in this study calculations are performed in the whole Brillouin zone and reveal the significance of correct description of the band structure near the edges of Brillouin zone, especially for indirect band gap P-rich host alloy, which may not be properly captured with simpler models. The theoretical results are compared with experimental studies, confirming their reliability. The influence of nitrogen on the band structure is discussed in terms of application of Ga(PAsN) in optoelectronic devices such as intermediate band solar cells and light emitters. It is found that Ga(PAsN) with low N and As concentration has a band structure suitable for integration in Si tandem solar cells, since the lattice mismatch between Si and Ga(PAsN) is small in this case. Moreover, it is concluded that P-rich Ga(PAsN) alloys with low N concentration have a promising band structure for two colour emitters. Additionally, the effect of nitrogen incorporation on the carrier localization is studied and discussed.

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Section: Introductionmentioning

confidence: 99%

“…A combination of the k•p and BAC model is a popular choice for modelling the band structure of HMAs 6,7,34 . However, the model applies only to electronic states in vicinity of Γ point and ignores the disorder in IB, e.g.…”

Section: Introductionmentioning

confidence: 99%

Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, and localization of states

Polak

Kudrawiec

Rubel

2019

Journal of Applied Physics

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“…While most of the focus has been to develop GaAs-based devices, as shown in figure 1, the InGaAsN alloy can be also used to develop a new range of InP-based devices (both lightemitting and detecting devices) and to further extend the operating wavelength into the mid-infrared [65][66][67] [69], which, however, only operated up to 190 K due to a relatively high threshold current density (2 kA cm −2 at 190 K). Annealing was shown to be important to improve the device properties demonstrating that material quality and defect-related recombination is also an important issue limiting the performance of dilute nitride lasers on InP.…”

Section: Physical Properties and Performance Of Gainasn/ Gaas And Gai...mentioning

confidence: 99%

The influence of inhomogeneities and defects on novel quantum well and quantum dot based infrared-emitting semiconductor lasers

Marko¹,

Sweeney²

2018

Semicond. Sci. Technol.

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In this paper we discuss the development of new semiconductor materials and approaches to overcome the fundamental limitations of well established (Al, In)GaAs/InP and InGaAsP/InP infrared-emitting lasers. We consider three approaches; dilute nitride InGaAsN-based structures; InAs-based quantum dot/dash structures and the most recently emerging dilute bismide (GaAsBi, InGaAsBi), all of which may be grown on either GaAs or InP substrates. These material systems provide a range of possibilities for band engineering and strain control, thereby giving new routes to improve device efficiency, overcoming existing limitations of device performance and to develop range of new cost-efficient devices with improved characteristics. However, all of these approaches have common difficulties related to establishing optimised growth conditions to produce high quality material for device fabrication. Particularly, in this paper we compare and contrast the effects of inhomogeneous carrier distribution in these systems and discuss the influence of this on the physical properties of lasers developed using these approaches.

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“…The latter example indicates the potential of this material’s’ combination among other proposed solutions for the MIR range. There have been reported a couple of simulated designs of type I or type II lasers’ active regions involving various materials matching the InP technology to extend the emission wavelengths [ 28 , 33 , 35 , 36 , 37 ], but they have never been translated into operational devices. The reasons they have not been successful are manifold: the proposed materials are of insufficient structural or optical quality (e.g., the dilute nitrides or dilute bismides), the electronic confinement of one type of carriers is too weak, or the strain is too high, or a combination of several of these.…”

Section: Introductionmentioning

confidence: 99%

Towards Interband Cascade lasers on InP Substrate

2021

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In this study, we propose designs of an interband cascade laser (ICL) active region able to emit in the application-relevant mid infrared (MIR) spectral range and to be grown on an InP substrate. This is a long-sought solution as it promises a combination of ICL advantages with mature and cost-effective epitaxial technology of fabricating materials and devices with high structural and optical quality, when compared to standard approaches of growing ICLs on GaSb or InAs substrates. Therefore, we theoretically investigate a family of type II, “W”-shaped quantum wells made of InGaAs/InAs/GaAsSb with different barriers, for a range of compositions assuring the strain levels acceptable from the growth point of view. The calculated band structure within the 8-band k·p approximation showed that the inclusion of a thin InAs layer into such a type II system brings a useful additional tuning knob to tailor the electronic confined states, optical transitions’ energy and their intensity. Eventually, it allows achieving the emission wavelengths from below 3 to at least 4.6 μm, while still keeping reasonably high gain when compared to the state-of-the-art ICLs. We demonstrate a good tunability of both the emission wavelength and the optical transitions’ oscillator strength, which are competitive with other approaches in the MIR. This is an original solution which has not been demonstrated so far experimentally. Such InP-based interband cascade lasers are of crucial application importance, particularly for the optical gas sensing.

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Electronic Band Structure and Material Gain of Dilute Nitride Quantum Wells Grown on InP Substrate

Cited by 8 publications

References 63 publications

Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, and localization of states

Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, and localization of states

The influence of inhomogeneities and defects on novel quantum well and quantum dot based infrared-emitting semiconductor lasers

Towards Interband Cascade lasers on InP Substrate

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