Abstract:The high room temperature mobility and the electron effective mass in BaSnO 3 are investigated in depth by evaluation of the free carrier absorption observed in infrared spectra for epitaxial films with free electron concentrations from 8.3 × 10 18 to 7.3 × 10 20 cm −3 . Both the optical band gap widening by conduction band filling and the carrier scattering mechanisms in the low and high doping regimes are consistently described employing parameters solely based on the intrinsic physical properties of BaSnO 3 .The results explain the current mobility limits in epitaxial films and demonstrate the potential of BaSnO 3 to outperform established wide band gap semiconductors also in the moderate doping regime.a Corresponding author, e-mail: c.niedermeier13@imperial.ac.uk arXiv:1609.05508v2 [cond-mat.mtrl-sci] 6 Dec 2016Transparent perovskite stannate BaSnO 3 shows great potential as a high-mobility electron transport material composed of abundant elements. Since the report of an extraordinary high room temperature mobility of 320 cm 2 /Vs for La:BaSnO 3 single crystals [1], which is the highest value reported for perovskite oxides, the material has rapidly attracted interest as high-mobility channel layer in oxide thin film transistors [2][3][4] and multi-functional perovskite-based optoelectronic devices [5,6]. To fully exploit the potential of La:BaSnO 3for device applications, current research concentrates on understanding and improving the electron transport in epitaxial La:BaSnO 3 thin films [7][8][9][10][11][12][13][14].La:BaSnO 3 thin films grown heteroepitaxially on SrTiO 3 substrates using pulsed laser rier scattering mechanism in BaSnO 3 is still lacking and would provide a guideline for improving the electron transport beyond the current mobility limits of epitaxial films.The high mobility in La:BaSnO 3 single crystals is attributed to the large dispersion of the Sn 5s orbital-derived conduction band and the ideal 180• O−Sn−O bond angle in the network of corner sharing (SnO 6 ) 2− octahedra in the cubic perovskite structure [15].Quantitatively, the electron mobility is given bywhere e is the electron charge, m * e is the electron effective mass and τ is the relaxation time Fig. 1(a)). The NiO buffer layer is slightly strained in plane while the La:BaSnO 3 thin film is completely relaxed and shows a moderate degree of mosaicity as indicated by the broadened diffraction peak relative to that of the MgO single crystal.The cross-sectional bright field transmission electron microscopy (TEM) image of the La:BaSnO 3 thin film on a NiO-buffered MgO substrate indicates columnar growth as deduced from the observation of grain boundaries marked by the arrows in Fig. 1(b). The cross-sectional high resolution micrograph shows that the La:BaSnO 3 /NiO interface is free of misfit dislocations ( Fig. 1(c)) as confirmed by the average background substraction filtered (ABSF) HR-TEM micrograph ( Fig. 1(d)). Consistent with the mosaicity derived from HR-XRD analysis, the La:BaSnO 3 microstructure shows grains of ca...