Electronic band structure modulated by local surface strain in the (111) facet of the 〈112〉 silicon nanowires

Zhang, Lihong; Xin, Xiaojun; Guo, Chunsheng; Gan, Li‐Yong; Zhao, Yong

doi:10.1016/j.ssc.2015.02.006

Cited by 3 publications

(1 citation statement)

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“…Strain engineering in this context is known to be an effective tool to tune the electronic properties in graphene [22][23][24][25] and monolayer MoS 2 [26][27][28] and other nanostructures. 29,30 In addition, strain is practically inevitable in nanostructures due to the lattice mismatch with the substrate. 28,[31][32][33] For this reason, we investigate in the following study how biaxial strain affects the CDW phases of monolayer and bilayer 1T-TaS 2 .…”

Section: Introductionmentioning

confidence: 99%

Strain tuning of the charge density wave in monolayer and bilayer 1T-TaS₂

Gan

Zhang

et al. 2016

Phys. Chem. Chem. Phys.

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By first-principles calculations, we investigate the strain effects on the charge density wave states of monolayer and bilayer 1T-TaS 2 . The modified stability of the charge density wave in the monolayer is understood in terms of the strain dependent electron localization, which determines the distortion amplitude. On the other hand, in the bilayer the effect of strain on the interlayer interaction is also crucial. The rich phase diagram under strain opens new venues for applications of 1T-TaS 2 . We interpret the experimentally observed insulating state of bulk 1T-TaS 2 as inherited from the monolayer by effective interlayer decoupling.

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